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AS7C316098A-10TIN

Alliance Memory

AS7C316098A-10TIN by Alliance Memory

Alliance Memory's AS7C316098A-10TIN is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and offers 3-state output capability. With a max supply voltage of 3.6V, this CMOS technology memory chip supports parallel operation with common I/O type.

Median Price

$37.625

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Mouser Electronics

USA . 161 parts In-Stock

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$34.330

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$28.540

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DigiKey

USA . 172 parts In-Stock

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$40.920

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$34.878

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$33.486

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$40.920

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$33.486

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Nova Conductors

Japan . 500 parts In-Stock

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$16.445

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Vyrian

USA . 7,518 parts In-Stock

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Kruse

Germany . 3,780 parts In-Stock

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Kruse Electronics AG

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VNN

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NAC Semi

USA . 245 parts In-Stock

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$25.970

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$24.040

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Cyclops Electronics Ltd

UK . 4 parts In-Stock

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AZTECH Wire

Italy . 755 parts In-Stock

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$13.631

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$13.631

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Netroflash

USA . 1,000 parts In-Stock

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$16.445

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

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$4.667

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$4.322

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$4.322

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$4.322

Authorized Procurement Solutions

USA . 230 parts In-Stock

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Eastek

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GreenTree Electronics

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Overview

Unleash the power of innovation with the AS7C316098A-10TIN by Alliance Memory. As a leading manufacturer in the industry, Alliance Memory offers top-quality SRAM products that deliver reliable performance and unmatched durability. Ideal for a wide range of applications, this memory module provides customers with exceptional value, benefits, and advantages. Experience seamless functionality and enhanced efficiency with the AS7C316098A-10TIN, setting new standards for excellence in memory technology. Elevate your projects to the next level with Alliance Memory's cutting-edge solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V ensures efficient power consumption and compatibility with existing systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product is suitable for industrial applications where temperature variations are common.

Technology: CMOS

Being based on CMOS technology ensures low power consumption and high noise immunity, making the product reliable and efficient.

Maximum Access Time: 10 ns

The fast access time of 10 ns allows for quick data retrieval, ideal for high-performance computing and real-time applications.

Technical Specifications

SRAM AS7C316098A-10TIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.04 Amp

Minimum Standby Voltage:

1.5 V

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

12 mm

Trade Compliance

AS7C316098A-10TIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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