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RECTANGULAR SRAM 439

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
UPD46184185BF1-E33Y-EQ1-A by Renesas Electronics

UPD46184185BF1-E33Y-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-609 Code: e6;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184185BF1-E40-EQ1-A by Renesas Electronics

UPD46184185BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 1048576 words;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

480 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E33-EQ1-A by Renesas Electronics

UPD46184362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 512KX36;

.45 ns

300 MHz

COMMON

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.43 Amp

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E40-EQ1-A by Renesas Electronics

UPD46184362BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185092BF1-E40-EQ1-A by Renesas Electronics

UPD46185092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 2MX9;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E33-EQ1-A by Renesas Electronics

UPD46185094BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E40-EQ1-A by Renesas Electronics

UPD46185094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E33-EQ1-A by Renesas Electronics

UPD46185182BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E40-EQ1-A by Renesas Electronics

UPD46185182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185184BF1-E40Y-EQ1-A by Renesas Electronics

UPD46185184BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX18;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185362BF1-E33-EQ1-A by Renesas Electronics

UPD46185362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185364BF1-E40-EQ1-A by Renesas Electronics

UPD46185364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185364BF1-E40Y-EQ1-A by Renesas Electronics

UPD46185364BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Technology: CMOS;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364182BF1-E33-EQ1-A by Renesas Electronics

UPD46364182BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364362BF1-E33-EQ1-A by Renesas Electronics

UPD46364362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364362BF1-E40Y-EQ1-A by Renesas Electronics

UPD46364362BF1-E40Y-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364365BF1-E40-EQ1-A by Renesas Electronics

UPD46364365BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365084BF1-E40-EQ1-A by Renesas Electronics

UPD46365084BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

.45 ns

R-PBGA-B165

e6

15 mm

33554432 bit

QDR SRAM

8

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365092BF1-E40-EQ1-A by Renesas Electronics

UPD46365092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 37748736 bit;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365094BF1-E40-EQ1-A by Renesas Electronics

UPD46365094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365182BF1-E40-EQ1-A by Renesas Electronics

UPD46365182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E33-EQ1-A by Renesas Electronics

UPD46365184BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E33Y-EQ1-A by Renesas Electronics

UPD46365184BF1-E33Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 13 mm;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E40Y-EQ1-A by Renesas Electronics

UPD46365184BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365362BF1-E33-EQ1-A by Renesas Electronics

UPD46365362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365362BF1-E40Y-EQ1-A by Renesas Electronics

UPD46365362BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365364BF1-E40-EQ1-A by Renesas Electronics

UPD46365364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

CY62256NLL-55ZXIT by Cypress Semiconductor

CY62256NLL-55ZXIT

Cypress Semiconductor

CY62256NLL-55ZXIT by Cypress Semiconductor is a 32KX8 SRAM with a max access time of 55 ns. It operates asynchronously at a nominal voltage of 5V and has a small outline, thin profile package style. It is commonly used in industrial applications requiring high-speed memory storage.

55 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.00001 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.55 mm

DUAL

30

8 mm

CY62256NLL-70SNXCT by Cypress Semiconductor

CY62256NLL-70SNXCT

Cypress Semiconductor

CY62256NLL-70SNXCT by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1049DV33-10ZSXIT by Cypress Semiconductor

CY7C1049DV33-10ZSXIT

Cypress Semiconductor

CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

8

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

W968D6DAGX7I by Winbond Electronics

W968D6DAGX7I

Winbond Electronics

Winbond Electronics' W968D6DAGX7I is a 16Mx16 SRAM with 1.8V supply, 70ns access time, and 3-STATE output. Ideal for industrial applications, it features a very thin profile grid array package with common I/O type and asynchronous operation mode.

70 ns

COMMON

R-PBGA-B54

8 mm

268435456 bit

PSEUDO STATIC RAM

16

1

1

54

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

1 mm

.0004 Amp

1.7 V

Other Memory ICs

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

AS7C1024B-15JCNTR by Alliance Memory

AS7C1024B-15JCNTR

Alliance Memory

Alliance Memory's AS7C1024B-15JCNTR is a 128Kx8 SRAM with 15ns access time, ideal for commercial applications. Operating at 5V, it offers 1048576-bit memory density and features asynchronous mode. With a small outline package style, it is suitable for surface mount designs in various electronic devices.

15 ns

R-PDSO-J32

20.995 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7084 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

10.16 mm

AS7C316098A-10BINTR by Alliance Memory

AS7C316098A-10BINTR

Alliance Memory

Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.

10 ns

R-PBGA-B48

8 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS7C34096A-12JINTR by Alliance Memory

AS7C34096A-12JINTR

Alliance Memory

Alliance Memory's AS7C34096A-12JINTR is a 512Kx8 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it offers parallel interface, small outline package style, and moisture sensitivity level of 3.

12 ns

R-PDSO-J36

e3/e6

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7592 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm

AS7C38096A-10BIN by Alliance Memory

AS7C38096A-10BIN

Alliance Memory

Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.

10 ns

R-PBGA-B48

8 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS7C38096A-10TIN by Alliance Memory

AS7C38096A-10TIN

Alliance Memory

Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.

10 ns

R-PDSO-G44

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

AS7C34098A-10TINTR by Alliance Memory

AS7C34098A-10TINTR

Alliance Memory

Alliance Memory's AS7C34098A-10TINTR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With a memory density of 4Mbit, this CMOS technology-based chip offers reliable parallel data storage.

10 ns

R-PDSO-G44

e3/e6

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

HM216514TTI5SE by Renesas Electronics

HM216514TTI5SE

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 524288 words;

55 ns

R-PDSO-G44

18.41 mm

8388608 bit

STANDARD SRAM

16

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

IS61NLP102418B-200TQLI by Integrated Silicon Solution

IS61NLP102418B-200TQLI

Integrated Silicon Solution

IS61NLP102418B-200TQLI by Integrated Silicon Solution is a 1MX18 SRAM with 1048576 words, 18874368 bit memory density, and 3 ns max access time. Ideal for industrial applications requiring fast synchronous operation in a compact FLATPACK package with low profile design.

3 ns

R-PQFP-G100

20 mm

18874368 bit

STANDARD SRAM

18

1

100

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LQFP

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.6 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

QUAD

NOT SPECIFIED

14 mm

71V35761SA200BGGI by Integrated Device Technology

71V35761SA200BGGI

Integrated Device Technology

71V35761SA200BGGI by Integrated Device Technology is a 128KX36 CACHE SRAM with 3.3V supply voltage, operating synchronously at -40 to 85°C. Featuring a fast access time of 3.1 ns, it's ideal for industrial applications requiring high-speed parallel memory operations.

3.1 ns

PIPELINED

R-PBGA-B119

e1

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

71V3559S75BQI8 by Integrated Device Technology

71V3559S75BQI8

Integrated Device Technology

71V3559S75BQI8 by Integrated Device Technology is a CACHE SRAM with 256KX18 organization, operating at 3.3V. It features synchronous operation, thin profile grid array package style, and 7.5 ns max access time. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.

7.5 ns

R-PBGA-B165

e0

15 mm

4718592 bit

CACHE SRAM

18

3

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

225

1.2 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

13 mm

M74HC670B1R by STMicroelectronics

M74HC670B1R

STMicroelectronics

STMicroelectronics M74HC670B1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, CMOS technology, and 3-STATE output. Ideal for military applications due to its -55 to 125 °C temperature range and through-hole terminal form.

280 ns

R-PDIP-T16

e3

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

2/6

Not Qualified

5.1 mm

Other Memory ICs

6 V

2 V

4.5

NO

CMOS

MILITARY

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M74HC670M1R by STMicroelectronics

M74HC670M1R

STMicroelectronics

STMicroelectronics M74HC670M1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, operates in asynchronous mode, and has a temperature range of -55 to 125 °C. Ideal for military applications due to its small outline package and CMOS technology.

280 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

2/6

Not Qualified

1.75 mm

Other Memory ICs

6 V

2 V

4.5

YES

CMOS

MILITARY

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

SN74ACT2160-17FM by Texas Instruments

SN74ACT2160-17FM

Texas Instruments

The Texas Instruments SN74ACT2160-17FM is a 16Kx4 CACHE TAG SRAM with 17 ns access time, operating at 5V. It features 3-STATE output characteristics and operates in asynchronous mode. Ideal for applications requiring fast memory access in commercial temperature environments.

17 ns

8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM

R-PQCC-J32

65536 bit

CACHE TAG SRAM

4

1

1

32

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX4

3-STATE

NO

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

Not Qualified

.15 Amp

SRAMs

180 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

X24C44P by Xicor

X24C44P

Xicor

X24C44P by Xicor is a 256-bit NON-VOLATILE SRAM with 16x16 organization and 375ns access time. Operating at 5V, it features synchronous mode and 3-STATE output, suitable for commercial applications requiring reliable memory storage in a compact IN-LINE package.

375 ns

EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES

R-PDIP-T8

e0

10.03 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

70 Cel

0 Cel

16X16

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

4.07 mm

.00005 Amp

SRAMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

CY62256LL-70PC by Cypress Semiconductor

CY62256LL-70PC

Cypress Semiconductor

CY62256LL-70PC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package.

70 ns

COMMON

R-PDIP-T28

e0

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY62256L-70SNC by Cypress Semiconductor

CY62256L-70SNC

Cypress Semiconductor

CY62256L-70SNC by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a small outline package.

70 ns

COMMON

R-PDSO-G28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

1

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

2.794 mm

.00002 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

30

7.5057 mm

CY62256LL-70ZI by Cypress Semiconductor

CY62256LL-70ZI

Cypress Semiconductor

CY62256LL-70ZI by Cypress Semiconductor is a 32KX8 SRAM with 70 ns access time, operating at 5V. It features common I/O type, 3-STATE output characteristics, and GULL WING terminal form. Ideal for industrial applications requiring fast and reliable memory storage in a compact package.

70 ns

COMMON

R-PDSO-G28

e0

11.8 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

8 mm