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AS7C38096A-10BIN

Alliance Memory

AS7C38096A-10BIN by Alliance Memory

Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.

Median Price

$11.406

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Nova Conductors

Japan . 100 parts In-Stock

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Vyrian

USA . 8,749 parts In-Stock

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VNN

France . 1,121 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 301 parts In-Stock

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Kruse Electronics AG

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Kruse

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ARCO, INC.

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Continental Prestige Electronics

USA . 1,610 parts In-Stock

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AZTECH Wire

Italy . 430 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

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Netroflash

USA . 100 parts In-Stock

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Overview

Alliance Memory's AS7C38096A-10BIN is a top-quality SRAM that offers exceptional performance and reliability. With its advanced technology and industrial-grade temperature range, this memory IC is perfect for a wide range of applications. From industrial automation to telecommunications, the AS7C38096A-10BIN provides high-speed access and low power consumption, making it a valuable choice for customers looking for superior memory solutions. Trust Alliance Memory for cutting-edge technology and unparalleled quality in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and sturdy material suitable for various applications.

Surface Mount: YES

Convenient for automated assembly processes, saving time and effort.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage, ensuring compatibility with other components.

No. of Terminals: 48

Provides ample connectivity options for integration into different systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Can function in extremely cold conditions without issues.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Memory Width: 8

Provides a wide memory width for storing and retrieving data efficiently.

No. of Words: 1048576 words

High memory capacity allows for storing large amounts of data.

Maximum Access Time: 10 ns

Fast access time ensures quick data retrieval for improved performance.

Technical Specifications

SRAM AS7C38096A-10BIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

AS7C38096A-10BIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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