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RECTANGULAR SRAM 439

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1480V33-200AXC by Cypress Semiconductor

CY7C1480V33-200AXC

Cypress Semiconductor

CY7C1480V33-200AXC by Cypress is a 3.3V SRAM with 2MX36 organization, operating at 200MHz. It features synchronous operation, 100 terminals in a flatpack package, and is ideal for CACHE SRAM applications requiring fast access times up to 3ns.

3 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

75497472 bit

CACHE SRAM

36

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61C6416AL-12KI by Integrated Silicon Solution

IS61C6416AL-12KI

Integrated Silicon Solution

IS61C6416AL-12KI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-J44

e0

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

10.16 mm

IS61C6416AL-12KLI by Integrated Silicon Solution

IS61C6416AL-12KLI

Integrated Silicon Solution

IS61C6416AL-12KLI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J44

e3

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

IS61C6416AL-12TI by Integrated Silicon Solution

IS61C6416AL-12TI

Integrated Silicon Solution

IS61C6416AL-12TI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-G44

e0

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IS64C6416AL-15TLA3 by Integrated Silicon Solution

IS64C6416AL-15TLA3

Integrated Silicon Solution

IS64C6416AL-15TLA3 by Integrated Silicon Solution is a 64Kx16 SRAM with 5V supply, 15ns access time, and AEC-Q100 screening. Ideal for automotive applications due to its small outline package and wide operating temperature range from -40°C to 125°C. With common I/O type and 3-state output characteristics, it offers reliable performance in demanding environments.

15 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.2 mm

.000125 Amp

2 V

SRAMs

60 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

IS62WV12816BLL-55BLI by Integrated Silicon Solution

IS62WV12816BLL-55BLI

Integrated Silicon Solution

IS62WV12816BLL-55BLI by Integrated Silicon Solution is a 128KX16 SRAM with 55 ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

2097152 bit

STANDARD SRAM

16

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00001 Amp

1 V

SRAMs

30 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS62WV1288BLL-55QLI by Integrated Silicon Solution

IS62WV1288BLL-55QLI

Integrated Silicon Solution

IS62WV1288BLL-55QLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

55 ns

COMMON

R-PDSO-G32

e3

20.445 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3/3.3

Not Qualified

3 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS62WV1288BLL-55TLI by Integrated Silicon Solution

IS62WV1288BLL-55TLI

Integrated Silicon Solution

IS62WV1288BLL-55TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and Gull Wing terminals. Ideal for applications requiring fast and reliable memory storage in harsh environments.

55 ns

COMMON

R-PDSO-G32

e3

18.4 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

40

8 mm

CY7C1440AV33-167AXC by Cypress Semiconductor

CY7C1440AV33-167AXC

Cypress Semiconductor

CY7C1440AV33-167AXC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 3.3V supply, 167 MHz clock frequency, and 3.4 ns access time. It is used in applications requiring fast synchronous memory operations at commercial temperature grades.

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

e4

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

375 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1440AV33-167BZC by Cypress Semiconductor

CY7C1440AV33-167BZC

Cypress Semiconductor

CY7C1440AV33-167BZC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 1048576 words, 3.3V supply, and 3.4ns access time. It operates synchronously in commercial temperature range for applications requiring high-speed memory solutions.

3.4 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

e0

17 mm

37748736 bit

CACHE SRAM

36

3

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

Not Qualified

1.4 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

IS63LV1024L-10JLI by Integrated Silicon Solution

IS63LV1024L-10JLI

Integrated Silicon Solution

IS63LV1024L-10JLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 3-STATE output. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

10 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IS61LPS25636A-200TQLI by Integrated Silicon Solution

IS61LPS25636A-200TQLI

Integrated Silicon Solution

IS61LPS25636A-200TQLI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3.3V nominal voltage, operating at up to 200MHz clock frequency. Ideal for industrial applications requiring fast access time of 3.1ns and low standby current of 0.105Amp.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

9437184 bit

CACHE SRAM

36

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

CY7C1041D-10VXI by Cypress Semiconductor

CY7C1041D-10VXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOJ; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

10 ns

COMMON

R-PDSO-J44

e4

28.575 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1041D-10ZSXI by Cypress Semiconductor

CY7C1041D-10ZSXI

Cypress Semiconductor

CY7C1041D-10ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 10ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1049D-10VXI by Cypress Semiconductor

CY7C1049D-10VXI

Cypress Semiconductor

CY7C1049D-10VXI by Cypress Semiconductor is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Widely used in industrial applications for its small outline package and parallel interface.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1399B-15VXI by Cypress Semiconductor

CY7C1399B-15VXI

Cypress Semiconductor

CY7C1399B-15VXI by Cypress Semiconductor is a 32KX8 CACHE SRAM with 3.3V supply, 15ns access time, and 3-STATE output. It operates in industrial temperature range and has a small outline package suitable for various parallel applications.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

CACHE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.00002 Amp

2 V

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

7.5 mm

CY7C1440AV33-250AXI by Cypress Semiconductor

CY7C1440AV33-250AXI

Cypress Semiconductor

CY7C1440AV33-250AXI by Cypress is a 1MX36 CACHE SRAM with 3.3V supply, 250MHz clock frequency, and 2.6ns access time. Ideal for industrial applications requiring high-speed synchronous memory with low power consumption.

2.6 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

475 mA

3.6 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61LV6416-10BLI by Integrated Silicon Solution

IS61LV6416-10BLI

Integrated Silicon Solution

IS61LV6416-10BLI by Integrated Silicon Solution is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact GRID ARRAY package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS62LV256AL-45ULI by Integrated Silicon Solution

IS62LV256AL-45ULI

Integrated Silicon Solution

IS62LV256AL-45ULI by Integrated Silicon Solution is a 32KX8 SRAM with 3.3V supply, 45ns access time, and 32768 words. Ideal for industrial applications requiring fast and reliable memory storage in a small outline package.

45 ns

COMMON

R-PDSO-G28

e3

18.11 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

2.84 mm

.00002 Amp

2 V

SRAMs

12 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

8.405 mm

CD74HCT670M96E4 by Texas Instruments

CD74HCT670M96E4

Texas Instruments

CD74HCT670M96E4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 53ns. Ideal for military-grade applications requiring fast and reliable memory storage in a compact small outline package.

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

CD74HCT670MTE4 by Texas Instruments

CD74HCT670MTE4

Texas Instruments

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

IDT71256SA12YGI8 by Integrated Device Technology

IDT71256SA12YGI8

Integrated Device Technology

IDT71256SA12YGI8 by Integrated Device Technology is a 32Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

MT45W1MW16BDGB-701IT by Micron Technology

MT45W1MW16BDGB-701IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 1MX16;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

COMMON

R-PBGA-B54

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W1MW16PDGA-70IT by Micron Technology

MT45W1MW16PDGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16BCGB-701WT by Micron Technology

MT45W4MW16BCGB-701WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16BCGB-708WT by Micron Technology

MT45W4MW16BCGB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS61LV6416-10TLI by Integrated Silicon Solution

IS61LV6416-10TLI

Integrated Silicon Solution

IS61LV6416-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 10ns access time, 44 terminals in a small outline package, and is ideal for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS63LV1024L-10TLI by Integrated Silicon Solution

IS63LV1024L-10TLI

Integrated Silicon Solution

IS63LV1024L-10TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 10ns access time, operating at 3.3V. It features a small outline package suitable for industrial applications, offering 131072 words of memory with 1048576 bits density in an asynchronous mode.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

10.16 mm

CY7C1019CV33-10ZXI by Cypress Semiconductor

CY7C1019CV33-10ZXI

Cypress Semiconductor

CY7C1019CV33-10ZXI by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

3 V

SRAMs

80 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1019CV33-12ZXC by Cypress Semiconductor

CY7C1019CV33-12ZXC

Cypress Semiconductor

CY7C1019CV33-12ZXC by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply voltage, operating at 0-70°C. It features asynchronous mode, 12ns access time, and 1.27mm terminal pitch. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

2 V

SRAMs

75 mA

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1399BN-12ZXC by Cypress Semiconductor

CY7C1399BN-12ZXC

Cypress Semiconductor

CY7C1399BN-12ZXC by Cypress Semiconductor is a 32KX8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 12ns access time, and 55mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0005 Amp

3 V

SRAMs

55 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.55 mm

DUAL

30

8 mm

CY7C1021BN-12ZXC by Cypress Semiconductor

CY7C1021BN-12ZXC

Cypress Semiconductor

CY7C1021BN-12ZXC by Cypress Semiconductor is a 64KX16 SRAM with 12 ns access time, operating at 5V. It features a small outline package and GULL WING terminals, suitable for commercial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXC by Cypress Semiconductor

CY7C1021BN-15VXC

Cypress Semiconductor

CY7C1021BN-15VXC by Cypress: 64KX16 SRAM with 15ns access time, 5V supply voltage, and 3-STATE output. Ideal for commercial applications requiring fast parallel memory operations in a compact SMALL OUTLINE package.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1021BN-15VXI by Cypress Semiconductor

CY7C1021BN-15VXI

Cypress Semiconductor

CY7C1021BN-15VXI by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features 3-STATE output and is ideal for industrial applications requiring fast and reliable parallel memory storage. This small outline package offers common I/O type and dual terminal position for easy integration in various electronic devices.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1021BN-15ZXI by Cypress Semiconductor

CY7C1021BN-15ZXI

Cypress Semiconductor

CY7C1021BN-15ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a fast access time of 15ns and industrial temperature grade. Ideal for applications requiring high-speed memory operations in harsh environments.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IDT71256SA12YGI by Integrated Device Technology

IDT71256SA12YGI

Integrated Device Technology

IDT71256SA12YGI by Integrated Device Technology is a 32Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and asynchronous operation, suitable for industrial applications requiring fast and reliable memory storage. With 3-state output characteristics and common I/O type, it offers high performance in a compact form factor.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C1041BNV33L-15ZXC by Cypress Semiconductor

CY7C1041BNV33L-15ZXC

Cypress Semiconductor

CY7C1041BNV33L-15ZXC by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, 15ns access time, and 170mA supply current. It is used in commercial applications requiring fast and reliable memory storage in a small outline package.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.00033 Amp

2 V

SRAMs

170 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS62WV10248BLL-55BLI by Integrated Silicon Solution

IS62WV10248BLL-55BLI

Integrated Silicon Solution

IS62WV10248BLL-55BLI by Integrated Silicon Solution is a 1MX8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8.7 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00002 Amp

1.2 V

SRAMs

35 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

7.2 mm

IS62WV1288DBLL-45HLI by Integrated Silicon Solution

IS62WV1288DBLL-45HLI

Integrated Silicon Solution

IS62WV1288DBLL-45HLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, 45ns access time, and 1048576-bit memory density. Ideal for applications requiring fast and reliable data storage in harsh environments.

45 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

1.2 V

SRAMs

8 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

CY14E256L-SZ35XI by Cypress Semiconductor

CY14E256L-SZ35XI

Cypress Semiconductor

CY14E256L-SZ35XI by Cypress Semiconductor is a 32Kx8 SRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 35ns and industrial temperature grade suitability. Ideal for applications requiring fast, non-volatile memory storage in compact designs.

35 ns

R-PDSO-G32

e3

20.726 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.54 mm

.0015 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

7.505 mm

IS61WV102416BLL-10MI by Integrated Silicon Solution

IS61WV102416BLL-10MI

Integrated Silicon Solution

IS61WV102416BLL-10MI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

235

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

BALL

.75 mm

BOTTOM

30

9 mm

IS64WV102416BLL-10MA3 by Integrated Silicon Solution

IS64WV102416BLL-10MA3

Integrated Silicon Solution

IS64WV102416BLL-10MA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

AEC-Q100

1.2 mm

.05 Amp

1.2 V

SRAMs

140 mA

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

TIN LEAD

BALL

.75 mm

BOTTOM

9 mm

CY7C1019CV33-10ZXCT by Cypress Semiconductor

CY7C1019CV33-10ZXCT

Cypress Semiconductor

CY7C1019CV33-10ZXCT by Cypress Semiconductor is a 128KX8 SRAM with 131072 words, operating at 3.3V. It has a max access time of 10 ns and is ideal for commercial applications requiring fast and reliable memory storage in a small outline package.

10 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

10.16 mm

CY7C1021BL-15ZXIT by Cypress Semiconductor

CY7C1021BL-15ZXIT

Cypress Semiconductor

CY7C1021BL-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It has a small outline, thin profile package and is suitable for industrial applications requiring fast and reliable parallel memory storage.

15 ns

R-PDSO-G44

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.194 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

IS61LPS25618A-200TQLI by Integrated Silicon Solution

IS61LPS25618A-200TQLI

Integrated Silicon Solution

IS61LPS25618A-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with a max clock frequency of 200 MHz. It operates in synchronous mode and has a min standby voltage of 3.14 V. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

CACHE SRAM

18

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.000075 Amp

3.14 V

SRAMs

210 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

IS62C5128BL-45QLI by Integrated Silicon Solution

IS62C5128BL-45QLI

Integrated Silicon Solution

IS62C5128BL-45QLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.

45 ns

COMMON

R-PDSO-G32

e3

20.495 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.12 mm

.000015 Amp

2 V

SRAMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

CY6264-55SNXI by Cypress Semiconductor

CY6264-55SNXI

Cypress Semiconductor

CY6264-55SNXI by Cypress Semiconductor is an 8KX8 SRAM with a 55ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

55 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

65536 bit

STANDARD SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.03 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1021BN-15VXE by Cypress Semiconductor

CY7C1021BN-15VXE

Cypress Semiconductor

CY7C1021BN-15VXE by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is AEC-Q100 qualified for automotive applications. This asynchronous memory has 44 terminals, offers 3-STATE output characteristics, and supports common I/O type.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm