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IS62WV10248BLL-55BLI

Integrated Silicon Solution

IS62WV10248BLL-55BLI by Integrated Silicon Solution

IS62WV10248BLL-55BLI by Integrated Silicon Solution is a 1MX8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

Median Price

$15.610

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 232 parts In-Stock

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$15.610

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$13.030

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Nova Conductors

Japan . 76 parts In-Stock

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$6.712

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Vyrian

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NAC Semi

USA . 1,872 parts In-Stock

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North Shore Components

USA . 9 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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AZTECH Wire

Italy . 293 parts In-Stock

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RC Electronics

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Perfect Parts

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Lixinc

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Authorized Procurement Solutions

USA . 794 parts In-Stock

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Kepictronics

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ChipstoGo Electronic ltd

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Overview

Unlock the power of high-quality SRAM technology with the IS62WV10248BLL-55BLI by Integrated Silicon Solution. Designed to meet industrial-grade standards, this memory chip offers reliable performance in a variety of applications. With a memory density of 8388608 bits and a fast access time of 55ns, this CMOS technology-based chip provides seamless operation for your devices. Trust in ISS's expertise in memory solutions and experience the benefits of increased efficiency and improved functionality with the IS62WV10248BLL-55BLI. Upgrade your products today and see the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable and rugged applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation of the memory, enhancing overall system efficiency.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V ensures compatibility with standard power sources, making integration easier.

No. of Terminals: 48

A higher number of terminals provide more connectivity options and flexibility in system design.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising performance.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and storage capabilities, making it suitable for a variety of applications.

Technical Specifications

SRAM IS62WV10248BLL-55BLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8.7 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00002 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

7.2 mm

Trade Compliance

IS62WV10248BLL-55BLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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