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IS62WV51216GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution is a 512Kx16 SRAM with a max access time of 45ns. Operating at 3V, it features an industrial temperature grade and parallel interface. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,528 parts In-Stock

1+ parts

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4,528

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 95 parts In-Stock

1+ parts

$2.750

100+ parts

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95

$2.750

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AZTECH Wire

Italy . 196 parts In-Stock

1+ parts

$15.809

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196

$15.809

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Unlock the power of reliable and high-performance memory with the IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality SRAM products that excel in various applications. With a wide operating temperature range and compact design, this memory module offers unparalleled value and benefits to customers looking for efficient data storage solutions. Trust ISS to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring reliable performance over time.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Enables independent and flexible data transfers, making the SRAM suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 3

Works efficiently at a standard voltage level, ensuring compatibility with most electronic systems.

Maximum Operating Temperature: 85 °C

Ensures stable performance even in high-temperature environments, making the SRAM reliable in various conditions.

Memory Density: 8388608 bit

Offers a high memory density, allowing for storage of large amounts of data in a compact space.

Technical Specifications

SRAM IS62WV51216GBLL-45TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

IS62WV51216GBLL-45TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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