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IS61LPS25636A-200TQLI

Integrated Silicon Solution

IS61LPS25636A-200TQLI by Integrated Silicon Solution

IS61LPS25636A-200TQLI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3.3V nominal voltage, operating at up to 200MHz clock frequency. Ideal for industrial applications requiring fast access time of 3.1ns and low standby current of 0.105Amp.

Median Price

$19.240

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 144 parts In-Stock

1+ parts

$19.240

100+ parts

$16.641

1k+ parts

$15.494

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144

$19.240

$16.641

$15.494

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Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

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$10.965

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870

$10.965

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Vyrian

USA . 3,096 parts In-Stock

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Chip Stock

USA . 2,608 parts In-Stock

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ComSIT Distribution GmbH

Germany . 185 parts In-Stock

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185

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ComSIT USA

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185

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Prism Electronics

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Bristol Electronics

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Atlantic Semiconductor

USA . 13 parts In-Stock

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Classic Components Corporation

USA . 7 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 126 parts In-Stock

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$3.034

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$3.034

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Aztec Data Supply Inc.

USA . 5,703 parts In-Stock

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$4.044

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$4.044

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AZTECH Wire

Italy . 552 parts In-Stock

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$10.050

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552

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Aranea Global

USA . 100 parts In-Stock

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$10.746

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$10.316

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100

$10.746

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RC Electronics

USA . 5,400 parts In-Stock

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$17.130

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$16.150

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$15.820

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$16.150

$15.820

Continental Prestige Electronics

USA . 2,705 parts In-Stock

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Infinite Electronics LLP (Excess)

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Argo Parts USA

USA . 1,105 parts In-Stock

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Perfect Parts

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Kepictronics

USA . 580 parts In-Stock

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Overview

Elevate your electronic devices with the IS61LPS25636A-200TQLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch quality and reliability. This SRAM memory module is perfect for applications requiring fast and efficient data processing, offering a seamless user experience. With a wide operating temperature range and low power consumption, this product ensures optimal performance in industrial settings. Upgrade your systems today with ISS and experience unparalleled speed and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, making it reliable for long-term use.

Surface Mount: YES

Allows for easy installation and integration onto PCBs, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Ensures that data input and output is synchronized, improving overall system performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage to ensure stable operation and efficiency of the SRAM.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency allows for fast data transfer speeds, making it suitable for high-performance applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, enhancing the efficiency of the SRAM.

Memory IC Type: CACHE SRAM

Cache SRAM type provides fast access times and efficient data retrieval, making it ideal for applications requiring quick memory access.

Technical Specifications

SRAM IS61LPS25636A-200TQLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

3.1 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

100

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.105 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

275 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

10

Width:

14 mm

Trade Compliance

IS61LPS25636A-200TQLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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