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IS64WV102416BLL-10MA3

Integrated Silicon Solution

IS64WV102416BLL-10MA3 by Integrated Silicon Solution

IS64WV102416BLL-10MA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

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Vyrian

USA . 4,081 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 478 parts In-Stock

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Argo Parts USA

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Aranea Global

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Continental Prestige Electronics

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Perfect Parts

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Overview

Discover the cutting-edge IS64WV102416BLL-10MA3 by Integrated Silicon Solution, a premier SRAM memory solution designed for automotive applications. With a focus on quality and reliability, ISS stands out as a leading manufacturer in the industry, offering customers unparalleled value and performance. Ideal for demanding environments, this memory module boasts a wide operating temperature range and low standby voltage, ensuring optimal functionality at all times. Experience seamless operation and enhanced efficiency with the IS64WV102416BLL-10MA3, setting a new standard for memory solutions in the automotive sector.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a reliable and long-lasting product.

Surface Mount: YES

Allows for easy and efficient integration into electronic circuits and PCB designs.

Nominal Supply Voltage / Vsup (V): 3.3

Suitable for a wide range of applications and compatible with common power supply configurations.

Operating Mode: ASYNCHRONOUS

Enables independent and efficient operation without the need for synchronization signals.

Memory Density: 16777216 bit

Provides ample storage capacity for data and information, making it suitable for memory-intensive tasks.

Maximum Access Time: 10 ns

Ensures fast and responsive data access, improving overall system performance.

Technical Specifications

SRAM IS64WV102416BLL-10MA3 attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.05 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

IS64WV102416BLL-10MA3 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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