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IS64WV102416BLL-10MLA3

Integrated Silicon Solution

IS64WV102416BLL-10MLA3 by Integrated Silicon Solution

IS64WV102416BLL-10MLA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening and thin profile grid array package style.

Median Price

$41.940

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,509 parts In-Stock

1+ parts

$41.940

100+ parts

$34.720

1k+ parts

$34.620

10k+ parts

-

1,509

$41.940

$34.720

$34.620

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DigiKey

USA . 107 parts In-Stock

1+ parts

$41.940

100+ parts

$36.606

1k+ parts

$34.719

10k+ parts

-

107

$41.940

$36.606

$34.719

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$26.241

100+ parts

-

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100

$26.241

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Chip Stock

USA . 7,047 parts In-Stock

1+ parts

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7,047

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Vyrian

USA . 301 parts In-Stock

1+ parts

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301

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,186 parts In-Stock

1+ parts

$26.241

100+ parts

-

1k+ parts

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10k+ parts

$25.716

3,186

$26.241

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-

$25.716

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$26.241

100+ parts

-

1k+ parts

$24.929

10k+ parts

$24.404

1,000

$26.241

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$24.929

$24.404

Argo Parts USA

USA . 3,004 parts In-Stock

1+ parts

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3,004

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Perfect Parts

USA . 11 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the IS64WV102416BLL-10MLA3 by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch SRAM memory solutions for automotive applications, ensuring optimal functionality and durability. With a memory density of 16,777,216 bits and a maximum access time of just 10 ns, this product provides lightning-fast data retrieval and seamless operation. Trust ISS to deliver cutting-edge technology that exceeds expectations, offering customers unmatched value and efficiency for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components, ensuring a long-lasting product.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and effort during assembly.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and performance, making it suitable for use in automotive applications.

Package Shape: RECTANGULAR

Standard shape that fits well in most electronic devices and allows for efficient use of space.

Operating Mode: ASYNCHRONOUS

Provides flexibility in timing and data transfer, allowing for efficient communication with other components.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for stable and efficient operation of the SRAM.

Power Supplies (V): 2.5/3.3

Compatibility with multiple power supply options for versatile use in different systems.

No. of Terminals: 48

Sufficient number of terminals for connecting to other components and interfaces.

Maximum Operating Temperature: 125 °C

Capable of operating in high temperature environments, making it suitable for automotive and industrial applications.

Organization: 1MX16

Provides a large memory capacity with high data transfer rates, suitable for demanding applications.

Output Characteristics: 3-STATE

Allows for multiple outputs and high flexibility in data transmission.

Minimum Standby Voltage: 1.2 V

Low standby voltage helps in reducing power consumption during idle periods.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold temperatures, making it suitable for harsh environments.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for reliable connections.

Memory IC Type: STANDARD SRAM

Offers fast data access and retrieval, crucial for high-performance applications.

Technical Specifications

SRAM IS64WV102416BLL-10MLA3 attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.05 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

9 mm

Trade Compliance

IS64WV102416BLL-10MLA3 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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