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IS64WV204816BLL-12CTLA3

Integrated Silicon Solution

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates asynchronously at a max speed of 12 ns and supports a supply voltage range from 2.4V to 3.6V. Ideal for automotive applications, this small outline, thin profile memory IC offers reliable parallel data storage in compact systems.

Median Price

$75.170

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 185 parts In-Stock

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$75.170

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$65.420

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185

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Vyrian

USA . 3,861 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 25,893 parts In-Stock

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$4.760

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$4.760

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Corohmni

South Africa . 203 parts In-Stock

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$4.794

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AZTECH Wire

Italy . 584 parts In-Stock

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$15.962

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$46.458

100+ parts

$42.741

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$40.050

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3,000

$46.458

$42.741

$40.050

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Argo Parts USA

USA . 3,277 parts In-Stock

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Continental Prestige Electronics

USA . 2,001 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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Perfect Parts

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Overview

Elevate your technology with the IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution. As a leader in quality manufacturing, ISS brings you this top-notch SRAM that promises reliable performance and seamless integration. Ideal for automotive applications, this memory IC offers speed, efficiency, and durability, making it the perfect choice for your next project. Upgrade your system today and experience the unmatched value and benefits that ISS products deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easier and more efficient assembly onto circuit boards, saving time and effort during production.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and simplicity in timing requirements, making it easier to integrate into different systems.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V ensures compatibility with a wide range of systems and power sources.

No. of Terminals: 48

The high number of terminals allows for more connections and increased data throughput, making it suitable for high-performance applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the SRAM efficient and reliable for various applications.

Maximum Access Time: 12 ns

The fast access time of 12ns ensures quick retrieval and storage of data, making the SRAM ideal for applications requiring high-speed operation.

Technical Specifications

SRAM IS64WV204816BLL-12CTLA3 attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

12 ns

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

IS64WV204816BLL-12CTLA3 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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