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IS64WV102416BLL-10MLA3-TR

Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution is a 1MX16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package suitable for automotive applications. This CMOS memory IC has a density of 16Mbit and operates in parallel mode with a temperature range of -40 to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,017 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 567 parts In-Stock

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Continental Prestige Electronics

USA . 2,092 parts In-Stock

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Argo Parts USA

USA . 347 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Experience unparalleled speed and reliability with the IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-tier SRAM technology that is perfect for a wide range of applications. With a high memory density of 16777216 bits and a lightning-fast maximum access time of 10ns, this product provides exceptional performance for automotive-grade projects. Trust ISS to provide cutting-edge solutions that push the boundaries of what is possible in memory technology. Elevate your projects with the IS64WV102416BLL-10MLA3-TR today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure installation on PCBs, saving time and improving reliability.

Operating Mode: ASYNCHRONOUS

Enables independent operation of the SRAM without the need for synchronization, improving performance and flexibility.

Nominal Supply Voltage / Vsup (V): 3.3

Offers a stable voltage supply for reliable operation of the SRAM.

No. of Terminals: 48

Provides sufficient connectivity options for interfacing with other components in the system.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Allows for compact and space-saving integration of the SRAM in the overall system design.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments, making it suitable for various applications.

Organization: 1MX16

Offers a high memory capacity with a wide data width, suitable for demanding data processing tasks.

Minimum Operating Temperature: -40 °C

Provides versatility for operation in extreme temperature conditions, increasing the range of potential applications.

Terminal Position: BOTTOM

Facilitates easy and efficient connection to the PCB, enhancing the installation process.

Technical Specifications

SRAM IS64WV102416BLL-10MLA3-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PBGA-B48

Length:

11 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

IS64WV102416BLL-10MLA3-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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