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RECTANGULAR SRAM 439

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
MT45W2MW16PABA-70WT by Micron Technology

MT45W2MW16PABA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PAFA-70IT by Micron Technology

MT45W2MW16PAFA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-70WT by Micron Technology

MT45W2MW16PAFA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 2M;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-85WT by Micron Technology

MT45W2MW16PAFA-85WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA48,6X8,30;

85 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

17 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PBA-70IT by Micron Technology

MT45W4MW16PBA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16BABB-706LWT by Micron Technology

MT45W2MW16BABB-706LWT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 8 mm;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00009 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-706WT by Micron Technology

MT45W2MW16BAFB-706WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-856WT by Micron Technology

MT45W2MW16BAFB-856WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -30 Cel;

85 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

M48Z58Y-70MH1E by STMicroelectronics

M48Z58Y-70MH1E

STMicroelectronics

M48Z58Y-70MH1E by STMicroelectronics is a non-volatile SRAM with 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 70 ns and operates in temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

70 ns

R-PDSO-G28

e3

18.1 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH1E by STMicroelectronics

M48Z35Y-70MH1E

STMicroelectronics

M48Z35Y-70MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a max access time of 70 ns, operating at 5V. It features a compact SO package and operates asynchronously, making it ideal for data storage in various electronic applications. With a commercial temp grade, it suits diverse environments.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH6E by STMicroelectronics

M48Z35Y-70MH6E

STMicroelectronics

M48Z35Y-70MH6E by STMicroelectronics is a non-volatile SRAM with a 32K x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring reliable data retention.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

8.56 mm

CY62168DV30LL-55BVI by Cypress Semiconductor

CY62168DV30LL-55BVI

Cypress Semiconductor

CY62168DV30LL-55BVI by Cypress is a 2MX8 SRAM with 3V supply, 55ns access time, and 16777216-bit memory density. Ideal for industrial applications requiring fast, common I/O asynchronous operation in a compact grid array package.

55 ns

COMMON

R-PBGA-B48

e0

9.5 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

220

2.5/3.3

Not Qualified

1 mm

.00001 Amp

1.5 V

SRAMs

30 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

8 mm

M48Z32V-35MT1F by STMicroelectronics

M48Z32V-35MT1F

STMicroelectronics

M48Z32V-35MT1F by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features a max access time of 35 ns and operates in temperatures from 0 °C to 70 °C. This compact, surface-mount device ensures efficient performance in various electronic systems.

35 ns

R-PDSO-G44

e3/e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SSOP

SOP44,.5,32

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

3.05 mm

.0005 Amp

SRAMs

45 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.81 mm

DUAL

NOT SPECIFIED

8.56 mm

M48Z35AV-10MH1E by STMicroelectronics

M48Z35AV-10MH1E

STMicroelectronics

M48Z35AV-10MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features asynchronous operation with a max access time of 100 ns and operates b/w 0 °C to 70 °C. This compact, surface-mount device is perfect for commercial electronics needing efficient memory solutions.

100 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

23K640-E/P by Microchip Technology

23K640-E/P

Microchip Technology

23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

TS 16949

5.334 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23K640-E/ST by Microchip Technology

23K640-E/ST

Microchip Technology

23K640-E/ST by Microchip Technology is a CMOS SRAM with 8Kx8 organization, operating at up to 16 MHz. It features separate I/O, 3-state output characteristics, and operates in automotive temperature grade applications.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K640T-E/ST by Microchip Technology

23K640T-E/ST

Microchip Technology

23K640T-E/ST by Microchip Technology is a 8Kx8 SRAM with 16MHz clock frequency, operating at -40 to 125°C. It has separate I/O, 3-state output, and serial interface. Ideal for automotive applications due to TS16949 screening level and low standby current of 0.00001A.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

IS63LV1024L-12BLI by Integrated Silicon Solution

IS63LV1024L-12BLI

Integrated Silicon Solution

IS63LV1024L-12BLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a thin profile grid array package and offers a fast access time of 12ns. Ideal for industrial applications requiring high-speed memory in compact form factors.

12 ns

COMMON

R-PBGA-B36

e1

10 mm

1048576 bit

STANDARD SRAM

8

3

1

36

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

100 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

8 mm

IS63LV1024L-12JL by Integrated Silicon Solution

IS63LV1024L-12JL

Integrated Silicon Solution

IS63LV1024L-12JL by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 3.3V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a small outline package.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IDT71256L35YI8 by Integrated Device Technology

IDT71256L35YI8

Integrated Device Technology

IDT71256L35YI8 by Integrated Device Technology is a 32Kx8 SRAM with 35ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous operation. Ideal for applications requiring fast and reliable memory storage in industrial environments.

35 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.0002 Amp

2 V

SRAMs

105 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

MT45W2MW16BAFB-708WT by Micron Technology

MT45W2MW16BAFB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

IS61C1024AL-12KLI by Integrated Silicon Solution

IS61C1024AL-12KLI

Integrated Silicon Solution

IS61C1024AL-12KLI by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

10

10.16 mm

MT45W8MW16BGX-701IT by Micron Technology

MT45W8MW16BGX-701IT

Micron Technology

MT45W8MW16BGX-701IT by Micron Technology is a 1.8V SRAM with 8MX16 organization, operating in industrial temperature range. Featuring 3-STATE output and parallel interface, it offers 8388608 words memory density for applications requiring fast access time of 70ns.

70 ns

COMMON

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

1

54

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.0002 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

CAT24C44VI-T3 by Onsemi

CAT24C44VI-T3

Onsemi

CAT24C44VI-T3 by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. Operating at 5V, it has a max standby current of 0.00003A and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring small outline packages and synchronous operation.

R-PDSO-G8

e3

4.9 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

1.75 mm

.00003 Amp

SRAMs

3 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

IDT71016S12PHGI by Integrated Device Technology

IDT71016S12PHGI

Integrated Device Technology

IDT71016S12PHGI by Integrated Device Technology is a 64KX16 SRAM with an operating mode of asynchronous and common input/output type. It has a max access time of 12 ns and is commonly used in industrial applications.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71016S12PHGI8 by Integrated Device Technology

IDT71016S12PHGI8

Integrated Device Technology

IDT71016S12PHGI8 by Integrated Device Technology is a 64Kx16 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and is designed for industrial applications requiring fast and reliable memory storage. With a compact rectangular package style and surface-mount capability, it offers high performance in a small footprint.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71124S12YGI by Integrated Device Technology

IDT71124S12YGI

Integrated Device Technology

IDT71124S12YGI by Integrated Device Technology is a 128Kx8 SRAM with asynchronous operation, 3-STATE output, and 12 ns access time. It is ideal for industrial applications requiring fast and reliable memory storage in a small outline package. With a supply voltage range of 4.5V to 5.5V, this CMOS technology-based SRAM offers high performance in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71124S12YGI8 by Integrated Device Technology

IDT71124S12YGI8

Integrated Device Technology

IDT71124S12YGI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71V124SA20PHGI by Integrated Device Technology

IDT71V124SA20PHGI

Integrated Device Technology

IDT71V124SA20PHGI by Integrated Device Technology is a 128Kx8 SRAM with 3.3V supply, operating in asynchronous mode. It features a max access time of 20ns and offers 131072 words of memory. Ideal for industrial applications requiring fast and reliable data storage with common I/O type and 3-STATE output characteristics.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V124SA20PHGI8 by Integrated Device Technology

IDT71V124SA20PHGI8

Integrated Device Technology

IDT71V124SA20PHGI8 is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 20ns access time, and 1.27mm terminal pitch. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V256SA10YG8 by Integrated Device Technology

IDT71V256SA10YG8

Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology is a 32Kx8 CACHE SRAM with 10ns access time, operating at 3.3V. It features a small outline package, 3-STATE output characteristics, and J BEND terminal form. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

10 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

CACHE SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.002 Amp

3 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C1463AV33-133AXC by Cypress Semiconductor

CY7C1463AV33-133AXC

Cypress Semiconductor

CY7C1463AV33-133AXC by Cypress Semiconductor is a 2MX18 ZBT SRAM with 133 MHz clock frequency, 6.5 ns access time, and 3.3V nominal voltage. It is used in applications requiring fast synchronous memory operations such as networking equipment and high-performance computing systems.

6.5 ns

FLOW-THROUGH ARCHITECTURE

133 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

ZBT SRAM

18

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.12 Amp

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61LV51216-10TLI by Integrated Silicon Solution

IS61LV51216-10TLI

Integrated Silicon Solution

IS61LV51216-10TLI by Integrated Silicon Solution is a 512KX16 SRAM with 10 ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and 44 terminals for parallel interfacing. Ideal for high-speed memory applications in industrial environments.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

3.14 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

IS62WV10248DBLL-55TLI by Integrated Silicon Solution

IS62WV10248DBLL-55TLI

Integrated Silicon Solution

IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.

55 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00004 Amp

1.4 V

SRAMs

22 mA

2.2 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

CY62167DV30LL-45ZXI by Cypress Semiconductor

CY62167DV30LL-45ZXI

Cypress Semiconductor

CY62167DV30LL-45ZXI by Cypress Semiconductor is a 1MX16 SRAM with 3.6V max supply voltage, 45ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable data storage in a compact thin profile package.

45 ns

CONFIGURABLE AS 2M X 8 ALSO

COMMON

R-PDSO-G48

e4

18.4 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.00001 Amp

1.5 V

SRAMs

37 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

20

12 mm

CY7C1021CV33-10ZXI by Cypress Semiconductor

CY7C1021CV33-10ZXI

Cypress Semiconductor

CY7C1021CV33-10ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 44 terminals. It operates in industrial temperatures and has a memory density of 1048576 bits. Ideal for applications requiring fast, common I/O type asynchronous memory with small outline package style.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.005 Amp

3 V

SRAMs

90 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1329H-166AXC by Cypress Semiconductor

CY7C1329H-166AXC

Cypress Semiconductor

CY7C1329H-166AXC by Cypress Semiconductor is a 64KX32 CACHE SRAM with 3.3V supply, operating at 166 MHz clock frequency. It features a low profile FLATPACK package and offers fast access time of 3.5 ns. Ideal for applications requiring high-speed synchronous memory in commercial-grade temperature environments.

3.5 ns

PIPELINED ARCHITECTURE

166 MHz

COMMON

R-PQFP-G100

e3

20 mm

2097152 bit

CACHE SRAM

32

3

1

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX32

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.04 Amp

3.14 V

SRAMs

240 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1041CV33-20ZSXE by Cypress Semiconductor

CY7C1041CV33-20ZSXE

Cypress Semiconductor

CY7C1041CV33-20ZSXE by Cypress is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 125°C. It features asynchronous mode, 20ns access time, and AEC-Q100 screening for automotive applications. The memory IC has a compact thin profile package with 0.8mm terminal pitch suitable for space-constrained designs.

20 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

3 V

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C106D-10VXI by Cypress Semiconductor

CY7C106D-10VXI

Cypress Semiconductor

CY7C106D-10VXI by Cypress Semiconductor is a 256KX4 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for parallel memory applications. With 262144 words and 1048576-bit density, it offers common I/O type and 3-STATE output characteristics.

10 ns

COMMON

R-PDSO-J28

e4

18.415 mm

1048576 bit

STANDARD SRAM

4

3

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX4

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.003 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

30

10.16 mm

AS6C4008-55SINTR by Alliance Memory

AS6C4008-55SINTR

Alliance Memory

Alliance Memory's AS6C4008-55SINTR is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features common I/O type and 3-state output characteristics in a small outline package. With parallel interface and low standby current, it suits various embedded systems.

55 ns

COMMON

R-PDSO-G32

e3/e6

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

3/5

Not Qualified

2.997 mm

.00003 Amp

1.5 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.303 mm

CY62157DV30LL-55BVXI by Cypress Semiconductor

CY62157DV30LL-55BVXI

Cypress Semiconductor

CY62157DV30LL-55BVXI by Cypress is a 512Kx16 SRAM with 55ns access time, operating at 3V. It features a very thin profile package and common I/O type, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

8388608 bit

STANDARD SRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1 mm

.000004 Amp

1.5 V

SRAMs

15 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

20

6 mm

CY62157DV30LL-55ZSXI by Cypress Semiconductor

CY62157DV30LL-55ZSXI

Cypress Semiconductor

CY62157DV30LL-55ZSXI by Cypress Semiconductor is a 512Kx16 SRAM with 3.3V nominal voltage, 55ns access time, and 8388608-bit memory density. It is used in industrial applications requiring fast and reliable data storage with a parallel interface.

55 ns

COMMON

R-PDSO-G44

e4

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.194 mm

.000004 Amp

1.5 V

SRAMs

15 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61LV25616AL-10TLI by Integrated Silicon Solution

IS61LV25616AL-10TLI

Integrated Silicon Solution

IS61LV25616AL-10TLI by Integrated Silicon Solution is a 256KX16 SRAM with 3.3V supply, operating at -40 to 85 °C. It features 10ns access time, 110mA max supply current, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in compact form factor.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.015 Amp

2 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS61LV5128AL-10KLI by Integrated Silicon Solution

IS61LV5128AL-10KLI

Integrated Silicon Solution

IS61LV5128AL-10KLI by Integrated Silicon Solution is a 512KX8 SRAM with 3.3V supply, 10ns access time, and 95mA max supply current. It's used in industrial applications requiring fast, common I/O asynchronous memory with 36 terminals and small outline package style.

10 ns

COMMON

R-PDSO-J36

e3

23.495 mm

4194304 bit

STANDARD SRAM

8

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.75 mm

.02 Amp

3.14 V

SRAMs

95 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

IS63LV1024L-10HL by Integrated Silicon Solution

IS63LV1024L-10HL

Integrated Silicon Solution

IS63LV1024L-10HL by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at 0-70°C. It features asynchronous operation, 10ns access time, and 32 terminals in a small outline package. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

10 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

260

3.3

Not Qualified

1.25 mm

.0015 Amp

2 V

SRAMs

95 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10

8 mm

CY62256LL-70PXC by Cypress Semiconductor

CY62256LL-70PXC

Cypress Semiconductor

CY62256LL-70PXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable memory storage in a rectangular package style.

70 ns

COMMON

R-PDIP-T28

e4

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

5.08 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

40

15.24 mm

CY62256LL-70SNXC by Cypress Semiconductor

CY62256LL-70SNXC

Cypress Semiconductor

CY62256LL-70SNXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY62256LL-70SNXI by Cypress Semiconductor

CY62256LL-70SNXI

Cypress Semiconductor

CY62256LL-70SNXI by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Widely used in industrial applications for its small outline package and parallel interface.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm