Loading...

MT45W8MW16BGX-701IT

Micron Technology

MT45W8MW16BGX-701IT by Micron Technology

MT45W8MW16BGX-701IT by Micron Technology is a 1.8V SRAM with 8MX16 organization, operating in industrial temperature range. Featuring 3-STATE output and parallel interface, it offers 8388608 words memory density for applications requiring fast access time of 70ns.

Median Price

$16.674

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 11,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,100

-

-

-

-

Vyrian

USA . 1,581 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,581

-

-

-

-

4 Star Electronics, Inc.

USA . 1,336 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,336

-

-

-

-

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

Digiode

USA . 820 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

820

-

-

-

-

SPM Sales

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

J2 Sourcing AB

Sweden . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Component Sense

UK . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$16.674

3

-

-

-

$16.674

ComSIT Distribution GmbH

Germany . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,379 parts In-Stock

1+ parts

$1.571

100+ parts

-

1k+ parts

$1.508

10k+ parts

$1.508

3,379

$1.571

-

$1.508

$1.508

AZTECH Wire

Italy . 897 parts In-Stock

1+ parts

$16.459

100+ parts

-

1k+ parts

-

10k+ parts

-

897

$16.459

-

-

-

Ampacity Inc.

Singapore . 818 parts In-Stock

1+ parts

$30.000

100+ parts

-

1k+ parts

-

10k+ parts

-

818

$30.000

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 16,671 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,671

-

-

-

-

Kepictronics

USA . 4,380 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,380

-

-

-

-

Continental Prestige Electronics

USA . 4,292 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,292

-

-

-

-

Perfect Parts

USA . 3,360 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,360

-

-

-

-

Corphita

USA . 2,138 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,138

-

-

-

-

Argo Parts USA

USA . 892 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

892

-

-

-

-

Microchip USA

USA . 194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

194

-

-

-

-

Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

GreenTree Electronics

Israel . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Overview

Discover the cutting-edge MT45W8MW16BGX-701IT by Micron Technology, a top-tier SRAM memory chip designed for industrial applications. With a focus on quality and reliability, Micron Technology is a trusted manufacturer in the industry. This innovative product offers unparalleled performance, low power consumption, and high-speed data access, making it ideal for a wide range of applications. Experience seamless operation and enhanced efficiency with the MT45W8MW16BGX-701IT, setting a new standard for memory solutions. Elevate your projects with this advanced technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage of 1.8V helps in reducing power consumption and heat dissipation.

No. of Terminals: 54

Having 54 terminals enables efficient connectivity and communication within the system.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM can withstand high temperature environments.

Technology: CMOS

Being based on CMOS technology ensures low power consumption and high noise immunity.

Maximum Access Time: 70 ns

The quick access time of 70 ns ensures fast data retrieval and processing, making it suitable for high-speed applications.

Technical Specifications

SRAM MT45W8MW16BGX-701IT attributes and parameters. Explore more SRAM devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B54

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,6X9,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.0002 Amp

Minimum Standby Voltage:

1.7 V

Sub-Category:

Other Memory ICs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT45W8MW16BGX-701IT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19