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IDT71V256SA10YG8

Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology is a 32Kx8 CACHE SRAM with 10ns access time, operating at 3.3V. It features a small outline package, 3-STATE output characteristics, and J BEND terminal form. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

Median Price

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,919 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 614 parts In-Stock

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Ampacity Inc.

Singapore . 1,560 parts In-Stock

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Semicontronic

India . 1,078 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,268 parts In-Stock

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Argo Parts USA

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Microchip USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Enhance your electronic devices with the IDT71V256SA10YG8 by Integrated Device Technology. As a leading manufacturer in the industry, Integrated Device Technology offers top-quality SRAM products like this one, designed for a wide range of applications. With a focus on reliability and performance, this CACHE SRAM memory device provides customers with the value, benefits, and advantages they need for seamless operation. Upgrade your technology today with the IDT71V256SA10YG8 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Provides faster data access and processing capabilities compared to synchronous operation.

Nominal Supply Voltage / Vsup (V): 3.3

Works efficiently at the commonly used 3.3V supply voltage, ensuring compatibility with other components.

No. of Terminals: 28

Provides a sufficient number of terminals for connectivity and interfacing with other devices in a circuit.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, making it suitable for use in various environments.

Organization: 32KX8

Offers a large memory capacity organized in 32k x 8 configuration for storing and retrieving data efficiently.

Technology: CMOS

CMOS technology provides low power consumption and high speed performance for improved efficiency.

Memory IC Type: CACHE SRAM

Being a cache SRAM, it provides fast access to frequently used data, enhancing overall system performance.

Technical Specifications

SRAM IDT71V256SA10YG8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J28

JESD-609 Code:

e3

Length:

17.9324 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ28,.34

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

3.556 mm

Maximum Standby Current:

.002 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

7.5184 mm

Trade Compliance

IDT71V256SA10YG8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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