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CY7C106D-10VXI

Cypress Semiconductor

CY7C106D-10VXI by Cypress Semiconductor

CY7C106D-10VXI by Cypress Semiconductor is a 256KX4 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for parallel memory applications. With 262144 words and 1048576-bit density, it offers common I/O type and 3-STATE output characteristics.

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Overview

Experience unparalleled performance and reliability with the CY7C106D-10VXI by Cypress Semiconductor, a leading manufacturer in the semiconductor industry. As a high-quality SRAM product, this memory device boasts a compact design and operates in an asynchronous mode, making it ideal for a wide range of applications. With a 256KX4 organization and 3-STATE output characteristics, this memory chip offers fast access times and low power consumption. Trust in Cypress Semiconductor to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the CY7C106D-10VXI and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable for long-term use.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

This shape is standard and fits well in most electronic devices, ensuring compatibility.

Operating Mode: ASYNCHRONOUS

Provides flexibility in data transfer, making the product suitable for a variety of applications.

Input/Output Type: COMMON

Simplifies connectivity and integration with other components, enhancing overall system efficiency.

Nominal Supply Voltage: 5V

Standard voltage level ensures compatibility with most electronic systems, reducing the risk of damage.

No. of Terminals: 28

Sufficient number of terminals for connecting to other devices, allowing for seamless communication.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on circuit boards, ideal for applications with limited room.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments or harsh conditions.

Organization: 256KX4

Efficient organization of memory cells, ensuring fast and reliable data retrieval.

Output Characteristics: 3-STATE

Allows for multiple output signals, providing versatility in data transmission.

Minimum Standby Voltage: 2V

Low standby voltage helps conserve energy, ideal for battery-powered devices.

Minimum Operating Temperature: -40 °C

Can function in extreme cold temperatures, suitable for various operating environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance and reliable electrical connections, ensuring long-term performance.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in installation, accommodating different PCB layouts.

Maximum Seated Height: 3.7592 mm

Low profile design saves space and allows for compact device construction.

Width: 10.16 mm

Compact width is suitable for applications with space constraints, maximizing layout efficiency.

Minimum Supply Voltage (Vsup): 4.5V

Can operate at low voltage levels, supporting a wide range of power requirements.

Maximum Time At Peak Reflow Temperature: 30s

Easy to solder during assembly, ensuring quick and efficient manufacturing processes.

Peak Reflow Temperature: 260C

High reflow temperature capability for reliable solder joints, ensuring product durability.

Length: 18.415 mm

Standard length for easy integration into electronic systems, facilitating seamless connectivity.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial temperature ranges, ensuring reliable performance in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, ideal for energy-efficient devices.

Parallel or Serial: PARALLEL

Parallel data transfer allows for fast and efficient communication within the system architecture.

Terminal Form: J BEND

J bend terminals provide secure connections and ease of installation, ensuring reliable electrical contact.

Maximum Supply Current: 80 mA

Low current consumption for efficient power usage, ideal for battery-powered devices.

No. of Words: 262144 words

Large memory capacity for storing extensive data, suitable for applications requiring high storage capabilities.

Memory Width: 4

4-bit memory width offers fast data access and processing, enhancing system performance.

Terminal Pitch: 1.27 mm

Standard terminal pitch for easy soldering and alignment, ensuring smooth PCB integration.

No. of Words Code: 256K

Organized memory structure for efficient data management, facilitating quick retrieval and storage.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates moderate sensitivity to moisture, suitable for normal manufacturing and storage conditions.

Maximum Supply Voltage (Vsup): 5.5V

High supply voltage tolerance for stable operation and protection against voltage fluctuations.

Memory Density: 1048576 bit

High memory density for storing large amounts of data in a compact form factor, ideal for memory-intensive applications.

Memory IC Type: STANDARD SRAM

Standard SRAM configuration for reliable and fast data storage and retrieval, ensuring seamless system operation.

Maximum Standby Current: 0.003 Amp

Low standby current consumption for energy efficiency, suitable for battery-powered devices.

Maximum Access Time: 10 ns

Fast access time ensures quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

SRAM CY7C106D-10VXI attributes and parameters. Explore more SRAM devices from Cypress Semiconductor

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J28

JESD-609 Code:

e4

Length:

18.415 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

4

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ28,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.7592 mm

Maximum Standby Current:

.003 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

CY7C106D-10VXI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Cypress Semiconductor

Cypress Semiconductor was an American semiconductor design and manufacturing company. It offered NOR flash memories, F-RAM and SRAM Traveo microcontrollers, PSoC programmable system-on-chip solutions, analog and PMIC Power Management ICs, CapSense capacitive touch-sensing controllers, Wireless BLE Bluetooth Low-Energy and USB connectivity solutions. Its headquarters were in San Jose, California, with operations in the United States, Ireland, India and the Philippines. In April 2016, Cypress Semiconductors announced the acquisition of Broadcom’s Wireless Internet of Things Business. The deal was closed in July 2016. In June 2019, Infineon Technologies announced it would acquire Cypress for $9.4 billion.The deal closed in April 2020, making Infineon one of the world's top 10 semiconductor manufacturers. Some of its main competitors included Microchip Technology, NXP Semiconductors, Renesas Electronics and Micron Technology.

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