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IS61LV51216-10TLI

Integrated Silicon Solution

IS61LV51216-10TLI by Integrated Silicon Solution

IS61LV51216-10TLI by Integrated Silicon Solution is a 512KX16 SRAM with 10 ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and 44 terminals for parallel interfacing. Ideal for high-speed memory applications in industrial environments.

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Vyrian

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Nova Conductors

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Rebound Electronics

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Speed Components Ltd

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ComSIT USA

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Resion

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Halfin

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ComSIT Distribution GmbH

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J2 Sourcing AB

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Aztec Data Supply Inc.

USA . 4,683 parts In-Stock

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$2.422

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AZTECH Wire

Italy . 438 parts In-Stock

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Corohmni

South Africa . 451 parts In-Stock

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Continental Prestige Electronics

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Alle Elektronik GmbH

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Aranea Global

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iodParts Technologies Inc.

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Overview

Unlock lightning-fast data access with the IS61LV51216-10TLI by Integrated Silicon Solution. This top-of-the-line SRAM offers unparalleled reliability and performance, making it ideal for industrial applications where speed and precision are critical. With a compact design and low power consumption, this memory module delivers exceptional value to customers seeking high-quality components. Trust in Integrated Silicon Solution's expertise to take your projects to the next level with the IS61LV51216-10TLI.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material ensures durability and resistance to external factors, making this product reliable for long-term use.

Surface Mount: YES

Surface mount capability makes installation and replacement of this product easy and convenient.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures efficient power usage and compatibility with standard systems.

No. of Terminals: 44

Having 44 terminals allows for versatile connectivity options and compatibility with various devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand harsh environmental conditions without compromising performance.

Technology: CMOS

The CMOS technology used in this product ensures low power consumption and high-speed operation, making it an efficient choice for memory applications.

Memory IC Type: STANDARD SRAM

Being a standard SRAM memory IC type, this product offers reliable and fast data storage and retrieval capabilities.

Technical Specifications

SRAM IS61LV51216-10TLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.415 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.025 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

3.63 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10.16 mm

Trade Compliance

IS61LV51216-10TLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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