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IS61C1024AL-12KLI

Integrated Silicon Solution

IS61C1024AL-12KLI by Integrated Silicon Solution

IS61C1024AL-12KLI by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

Median Price

$77.070

Lifecycle Status

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Chip1Stop

Japan . 11 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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$1.680

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Bristol Electronics

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Vyrian

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LWI Electronics Inc

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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PC Components Company LLC

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Netroflash

USA . 100 parts In-Stock

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AZTECH Wire

Italy . 844 parts In-Stock

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Eliminating Global Boundries, Inc

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Computer Components Inc. - USA

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iodParts Technologies Inc.

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Overview

Unlock the potential for seamless data processing with the IS61C1024AL-12KLI by Integrated Silicon Solution. As a leading manufacturer in the SRAM category, ISS delivers reliable and high-quality products that exceed industry standards. Ideal for a wide range of applications, this product offers customers unparalleled value, benefits, and advantages. Experience fast and efficient performance without compromising on quality. Upgrade your technology with ISS today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of input and output signals, providing flexibility in data transmission.

Nominal Supply Voltage / Vsup (V): 5

Operating at a 5V supply voltage ensures stable and reliable performance in various applications.

No. of Terminals: 32

With 32 terminals, this SRAM chip can handle multiple connections for efficient data processing.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM chip can withstand high temperature environments without performance degradation.

Organization: 128KX8

Organized as 128Kx8, this SRAM chip provides a large memory capacity of 128 kilobytes, suitable for storing and accessing a vast amount of data.

Minimum Standby Voltage: 2 V

The low minimum standby voltage of 2V ensures energy efficiency when the chip is in standby mode, conserving power.

Maximum Time At Peak Reflow Temperature (s): 10

With a maximum time of 10 seconds at peak reflow temperature, this SRAM chip can withstand the soldering process during manufacturing.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this SRAM chip meets the robustness and reliability requirements of industrial environments.

Technical Specifications

SRAM IS61C1024AL-12KLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

20.95 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ32,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.76 mm

Maximum Standby Current:

.00045 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10.16 mm

Trade Compliance

IS61C1024AL-12KLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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