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IS63LV1024L-12BLI

Integrated Silicon Solution

IS63LV1024L-12BLI by Integrated Silicon Solution

IS63LV1024L-12BLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a thin profile grid array package and offers a fast access time of 12ns. Ideal for industrial applications requiring high-speed memory in compact form factors.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,878 parts In-Stock

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Zilex Electronics Inc.

Canada . 5,404 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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AZTECH Wire

Italy . 462 parts In-Stock

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$14.933

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Argo Parts USA

USA . 5,085 parts In-Stock

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Continental Prestige Electronics

USA . 2,425 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Experience seamless and reliable performance with the IS63LV1024L-12BLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch quality SRAM memory solutions that cater to a wide range of applications. The IS63LV1024L-12BLI offers unparalleled value, benefits, and advantages to customers seeking high-speed data storage and retrieval capabilities. Trust ISS to provide cutting-edge technology that meets your demands for efficient and effective memory solutions. Choose the IS63LV1024L-12BLI for exceptional performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection to the internal components of the product.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for efficient performance and power consumption.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows the product to withstand harsh environmental conditions.

Memory IC Type: STANDARD SRAM

Standard SRAM memory IC type ensures compatibility and reliability in various applications.

Maximum Access Time: 12 ns

Fast access time ensures quick data retrieval and processing for improved performance.

Technical Specifications

SRAM IS63LV1024L-12BLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B36

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA36,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

8 mm

Trade Compliance

IS63LV1024L-12BLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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