Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CY7C1061AV33-10ZXC
Cypress Semiconductor
CY7C1061AV33-10ZXC by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 275mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.
10 ns
COMMON
R-PDSO-G54
e3
22.415 mm
16777216 bit
STANDARD SRAM
16
3
1
54
1048576 words
1M
ASYNCHRONOUS
70 Cel
0 Cel
1MX16
3-STATE
PLASTIC/EPOXY
TSOP2
TSOP54,.46,32
RECTANGULAR
SMALL OUTLINE, THIN PROFILE
PARALLEL
260
3.3
Not Qualified
1.2 mm
.05 Amp
3 V
SRAMs
275 mA
3.6 V
YES
CMOS
COMMERCIAL
Matte Tin (Sn)
GULL WING
.8 mm
DUAL
20
10.16 mm
IS61LPS25636A-200B3LI
Integrated Silicon Solution
IS61LPS25636A-200B3LI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a synchronous mode and operates on a supply voltage of 2.5/3.3V, making it suitable for industrial applications requiring fast access times and high memory density. The package style is grid array with thin profile, ideal for space-constrained designs.
3.1 ns
PIPELINED ARCHITECTURE
200 MHz
R-PBGA-B165
e1
15 mm
9437184 bit
CACHE SRAM
36
165
262144 words
256K
SYNCHRONOUS
85 Cel
-40 Cel
256KX36
TBGA
BGA165,11X15,40
GRID ARRAY, THIN PROFILE
2.5/3.3,3.3
.105 Amp
3.14 V
3.465 V
3.135 V
INDUSTRIAL
TIN SILVER COPPER
BALL
1 mm
BOTTOM
10
13 mm
DS1245ABP-70IND
Maxim Integrated
DS1245ABP-70IND by Maxim Integrated is a 128Kx8 SRAM with 70ns access time, operating at 5V. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular package with 34 terminals.
70 ns
R-XDMA-U34
e0
1048576 bit
NON-VOLATILE SRAM MODULE
8
34
131072 words
128K
128KX8
UNSPECIFIED
MODULE,34LEAD,1.0
MICROELECTRONIC ASSEMBLY
5
.005 Amp
85 mA
5.25 V
4.75 V
TIN LEAD
J INVERTED
IS61WV10248BLL-10MLI
IS61WV10248BLL-10MLI by Integrated Silicon Solution is a 1MX8 SRAM with 3.6V max supply voltage, 10ns access time, and 85°C max operating temp. Ideal for industrial applications requiring high-speed memory with a parallel interface in a compact grid array package.
R-PBGA-B48
11 mm
8388608 bit
48
1MX8
TFBGA
BGA48,6X8,32
GRID ARRAY, THIN PROFILE, FINE PITCH
2.5/3.3
.025 Amp
1.2 V
100 mA
2.4 V
.75 mm
9 mm
DS1220AD-200IND
DS1220AD-200IND by Maxim Integrated is a 2Kx8 SRAM with 5V supply, operating in asynchronous mode. It has a max access time of 200ns and industrial temperature grade. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.
200 ns
R-XDMA-P24
16384 bit
24
2048 words
2K
2KX8
DIP
DIP24,.6
15 mA
5.5 V
4.5 V
NO
PIN/PEG
2.54 mm
40
DS1225Y-200IND
DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.
10 YEAR DATA RETENTION
R-XDMA-P28
65536 bit
28
8192 words
8K
8KX8
DIP28,.6
DS1230W-100IND
NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 256KX8;
100 ns
R-PDIP-T28
38.225 mm
2097152 bit
256KX8
IN-LINE
10.668 mm
.00015 Amp
50 mA
THROUGH-HOLE
15.24 mm
DS1270Y-70IND
DS1270Y-70IND by Maxim Integrated is a 2MX8 SRAM with 2097152 words, 16777216 bit memory density, and 70 ns max access time. It operates in industrial temperature range (-40 to 85 °C) and is ideal for applications requiring non-volatile memory storage in microelectronic assemblies.
5 YEAR DATA RETENTION
R-PDMA-P36
2097152 words
2M
2MX8
IS62WV2568EBLL-45HLI
IS62WV2568EBLL-45HLI by Integrated Silicon Solution is an 256Kx8 SRAM with a max access time of 45ns. Operating at 3V, it features a parallel interface and industrial temperature grade suitable for various memory applications. The package style is small outline, thin profile, making it ideal for space-constrained designs.
45 ns
R-PDSO-G32
32
TSOP1
2.2 V
23LC1024T-E/SN
Microchip Technology
23LC1024T-E/SN by Microchip Technology is a synchronous SRAM with 128KX8 organization and 1048576 bit memory density. It operates at a max clock frequency of 16 MHz and has a min standby voltage of 2.5 V. This memory IC is commonly used in automotive applications due to its TS 16949 screening level and temperature grade.
16 MHz
COMMON/SEPARATE
R-PDSO-G8
4.9 mm
125 Cel
SOP
SOP8,.23
SMALL OUTLINE
SERIAL
3/5
TS 16949
1.75 mm
.00002 Amp
2.5 V
10 mA
AUTOMOTIVE
MATTE TIN
1.27 mm
3.9 mm
IS66WVE4M16TBLL-70BLI
IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution is a 4MX16 SRAM with 3-STATE output, operating in asynchronous mode. It features a memory density of 67108864 bit and offers a max access time of 70 ns. Ideal for industrial applications requiring fast and reliable parallel memory operations at temperatures ranging from -40 to 85°C.
8 mm
67108864 bit
PSEUDO STATIC RAM
4194304 words
4M
4MX16
BGA48,6X8,30
2.7 V
25 mA
6 mm
N01S818HAT22I
Onsemi
N01S818HAT22I by Onsemi is a 128KX8 SRAM with synchronous operation. It features a small outline, thin profile package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed memory access in compact electronic devices.
4.4 mm
TSSOP
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
1.1 mm
1.7 V
.65 mm
30
3 mm
IS61WV204816BLL-10TLI
IS61WV204816BLL-10TLI by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 10 ns. Ideal for applications requiring fast, asynchronous memory access in compact spaces.
R-PDSO-G48
18.4 mm
33554432 bit
2MX16
NOT SPECIFIED
.5 mm
12 mm
IS64WV204816BLL-12CTLA3
IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates asynchronously at a max speed of 12 ns and supports a supply voltage range from 2.4V to 3.6V. Ideal for automotive applications, this small outline, thin profile memory IC offers reliable parallel data storage in compact systems.
12 ns
IS61C1024AL-12KLI-TR
IS61C1024AL-12KLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package, asynchronous operation, and 3-state output. Ideal for industrial applications requiring fast and reliable memory storage.
R-PDSO-J32
20.95 mm
SOJ
SOJ32,.44
3.76 mm
.00045 Amp
2 V
J BEND
AS7C351232-10BINTR
Alliance Memory
Alliance Memory's AS7C351232-10BINTR is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a thin profile grid array package and CMOS technology for reliable performance in harsh environments.
R-PBGA-B90
90
524288 words
512K
512KX32
AS7C351232-10BIN
Alliance Memory's AS7C351232-10BIN is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring fast parallel memory solutions.
IS62WV51216GBLL-45TLI
IS62WV51216GBLL-45TLI by Integrated Silicon Solution is a 512Kx16 SRAM with a memory density of 8388608 bits. It operates in asynchronous mode with a max access time of 45 ns, suitable for industrial applications requiring fast and reliable data storage. The memory IC type is standard SRAM, featuring parallel interface and low power consumption at supply voltages ranging from 2.2V to 3.6V.
512KX16
AS6C1008-55SINL
Alliance Memory's AS6C1008-55SINL is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it offers parallel interface, small outline package, and operates in temperature range of -40 to 85°C.
55 ns
LG-MAX
20.75 mm
2.997 mm
11.303 mm
IS62WV51216HBLL-45B2LI
IS62WV51216HBLL-45B2LI by Integrated Silicon Solution is a 512Kx16 SRAM with 8388608-bit memory density. It operates at 3V, has a max access time of 45ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable data storage in compact devices.
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
IS61VPS204836B-250B3L-TR
IS61VPS204836B-250B3L-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates at 2.5V, has a memory width of 36 bits, and offers a max access time of 2.8 ns. Ideal for applications requiring fast synchronous memory with high storage capacity in commercial temperature environments.
2.8 ns
75497472 bit
2MX36
2.625 V
2.375 V
2.5
IS61VPS204836B-250B3LI-TR
IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates in synchronous mode at 2.5V, with a max access time of 2.8 ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.
IS61WV204816BLL-10TLI-TR
IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at 3V, has a max access time of 10ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.
IS62WV102416DBLL-45TLI-TR
IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at an industrial temperature grade of -40 to 85 °C, it offers a max access time of 45 ns. Ideal for applications requiring fast and reliable data storage in harsh environments.
IS62WV102416FBLL-45BLI-TR
IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with a memory density of 16Mbit. It operates asynchronously at a max access time of 45ns and has a temperature grade suitable for industrial applications.
IS62WV102416GBLL-45TLI-TR
IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at -40 to 85 °C, it has a max access time of 45 ns and uses CMOS technology. Ideal for industrial applications requiring fast, asynchronous memory with a supply voltage range of 2.2V to 3.6V.
IS62WV10248EBLL-45TLI-TR
IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution is a 1MX8 SRAM with 1048576 words and 8388608 bit memory density. Operating at -40 to 85 °C, it has a max access time of 45 ns. Ideal for industrial applications requiring fast, asynchronous memory with a parallel interface.
R-PDSO-G44
18.41 mm
44
IS62WV51216GBLL-45TLI-TR
IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution is a 512Kx16 SRAM with a max access time of 45ns. Operating at 3V, it features an industrial temperature grade and parallel interface. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
IS66WVE4M16EALL-70BLI-TR
IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.
1.95 V
IS66WVH16M8ALL-166B1LI-TR
IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.
R-PBGA-B24
134217728 bit
16777216 words
16M
16MX8
1.8
IS66WVH8M8ALL-166B1LI-TR
IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with 67108864-bit memory density. Operating at 1.8V, it offers a synchronous mode with a max access time of 36ns. Ideal for industrial applications requiring high-speed parallel memory solutions.
36 ns
8388608 words
8M
8MX8
IS66WVH8M8BLL-100B1LI-TR
IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.
40 ns
23LC1024-I/SNVAO
Microchip Technology's 23LC1024-I/SNVAO is a 128KX8 SRAM with synchronous operation and 3-STATE output. It operates at up to 20 MHz clock frequency, suitable for industrial applications requiring high-speed memory access. With a small outline package style and low standby current of 0.00001 Amp, it is ideal for space-constrained designs in automotive electronics.
20 MHz
AEC-Q100; TS 16949
.00001 Amp
IS64WV102416BLL-10MLA3-TR
IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution is a 1MX16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package suitable for automotive applications. This CMOS memory IC has a density of 16Mbit and operates in parallel mode with a temperature range of -40 to 125°C.
48L256-I/SN
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
66 MHz
262144 bit
32768 words
32K
32KX8
.0003 Amp
5 mA
48L512-I/SN
48L512-I/SN by Microchip Technology is a 64KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features 3-STATE output characteristics and operates on CMOS technology. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type in a small outline package.
524288 bit
65536 words
64K
64KX8
.0002 Amp
48L512T-I/SN
48L512T-I/SN by Microchip is a 64KX8 SRAM with 66 MHz clock frequency, 3-STATE output, and operates at -40 to 85 °C. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.
48L640-I/SN
48L640-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates at a max clock frequency of 66 MHz and has a min standby voltage of 2.7 V. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.
48L640T-I/SN
48L640T-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates in synchronous mode at a max clock frequency of 66 MHz, suitable for industrial applications requiring fast and reliable data storage. With a small outline package style and common I/O type, it offers high performance in a compact form factor.
48LM01-I/SM
48LM01-I/SM by Microchip Technology is a 128KX8 SRAM with synchronous operation and 66 MHz clock frequency. Ideal for industrial applications, it features a small outline package, 3-STATE output, and operates in the -40 to 85 °C temperature range.
5.26 mm
SOP8,.3
2.03 mm
5.25 mm
48LM01T-I/SM
48LM01T-I/SM by Microchip Technology is a 128KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features synchronous operation, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed memory access in a small outline package.
IS66WVH8M8DALL-200B1LI
IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.
BGA24,5X5,40
.00004 Amp
40 mA
IS66WVS4M8ALL-104NLI
IS66WVS4M8ALL-104NLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 33554432 bit and operates at an industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.
104 MHz
4MX8
SOP8,.25
1.65 V
IS66WVS2M8BLL-104NLI
IS66WVS2M8BLL-104NLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates at an industrial temperature grade. Ideal for applications requiring fast, reliable memory storage in compact electronic devices.
CY7C1380KV33-167BZIT
Infineon Technologies
CACHE SRAM; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit; Additional Features: PIPELINED OPERATION;
3.4 ns
PIPELINED OPERATION
167 MHz
18874368 bit
512KX36
LBGA
GRID ARRAY, LOW PROFILE
1.4 mm
.065 Amp
163 mA
CY7C1370KV33-167AXIT
ZBT SRAM; No. of Terminals: 100; Package Code: LQFP; Package Shape: RECTANGULAR; Maximum Access Time: 3.4 ns; Length: 20 mm;
R-PQFP-G100
20 mm
ZBT SRAM
100
LQFP
QFP100,.7X.9,32
FLATPACK, LOW PROFILE
1.6 mm
QUAD
14 mm
CY7C1380KV33-167AXIT
STANDARD SRAM; No. of Terminals: 100; Package Code: LQFP; Package Shape: RECTANGULAR; Technology: CMOS; Length: 20 mm;
PIPE LINED ARCHITECTURE
QFP100,.63X.87
.08 Amp
3.63 V
S80KS5122GABHV023
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Enable: NO; Maximum Clock Frequency (fCLK): 200 MHz;
536870912 bit
HYPERRAM
67108964 words
64M
105 Cel
64MX8
VBGA
GRID ARRAY, VERY THIN PROFILE
.004 Amp
44 mA
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