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AS7C351232-10BIN

Alliance Memory

AS7C351232-10BIN by Alliance Memory

Alliance Memory's AS7C351232-10BIN is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring fast parallel memory solutions.

Median Price

$41.550

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 164 parts In-Stock

1+ parts

$41.550

100+ parts

$36.275

1k+ parts

$34.235

10k+ parts

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164

$41.550

$36.275

$34.235

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$20.790

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100

$20.790

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Vyrian

USA . 8,808 parts In-Stock

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8,808

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Kruse

Germany . 8,300 parts In-Stock

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8,300

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ARCO, INC.

USA . 8,000 parts In-Stock

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8,000

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VNN

France . 733 parts In-Stock

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733

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Kruse Electronics AG

Switzerland . 297 parts In-Stock

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297

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Distributors (Availability)

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AZTECH Wire

Italy . 800 parts In-Stock

1+ parts

$17.316

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800

$17.316

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Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$20.790

100+ parts

$19.750

1k+ parts

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10k+ parts

$18.503

10

$20.790

$19.750

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$18.503

QUARKTWIN TECHNOLOGY LTD

USA . 11,374 parts In-Stock

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11,374

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the AS7C351232-10BIN by Alliance Memory. As a leading manufacturer in the industry, Alliance Memory delivers top-of-the-line SRAM products that are perfect for a wide range of applications. With a focus on quality and innovation, this memory device offers customers exceptional value, benefits, and advantages. Trust Alliance Memory to provide you with the best solutions for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a lower voltage of 3.3V helps in reducing power consumption and increasing efficiency.

Organization: 512KX32

With a high organization of 512KX32, this product offers a large memory capacity which is beneficial for storing and accessing large amounts of data.

Maximum Operating Temperature: 85 °C

Being able to operate at temperatures up to 85°C makes this product suitable for industrial environments where higher temperatures may be present.

Memory Width: 32

Having a memory width of 32 bits allows for faster data processing and manipulation, improving overall performance.

Technical Specifications

SRAM AS7C351232-10BIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

90

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

AS7C351232-10BIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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