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AS7C351232-10BINTR

Alliance Memory

AS7C351232-10BINTR by Alliance Memory

Alliance Memory's AS7C351232-10BINTR is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a thin profile grid array package and CMOS technology for reliable performance in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,994 parts In-Stock

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9,994

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Kruse Electronics AG

Switzerland . 2,000 parts In-Stock

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2,000

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VNN

France . 852 parts In-Stock

1+ parts

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852

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 718 parts In-Stock

1+ parts

$17.585

100+ parts

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718

$17.585

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience unrivaled performance and reliability with the AS7C351232-10BINTR by Alliance Memory. As a leading manufacturer in the industry, Alliance Memory delivers top-quality SRAM products that are ideal for a wide range of applications. With a focus on durability and efficiency, this SRAM chip offers customers unparalleled value and benefits. Trust Alliance Memory to provide you with cutting-edge technology that meets all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Enhanced durability and protection of internal components.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for efficient performance and power consumption.

Operating Mode: ASYNCHRONOUS

Allows for data retrieval without the need for a clock signal, increasing flexibility.

No. of Terminals: 90

Sufficient connectivity options for integration into complex systems.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with higher temperature requirements.

Organization: 512KX32

Efficient organization of memory for optimal data storage and retrieval.

Width: 8 mm

Compact size for space-constrained applications.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial operating conditions.

Technology: CMOS

Utilizes low power consumption CMOS technology for energy efficiency.

No. of Words: 524288 words

Large memory capacity for storing extensive data.

Maximum Access Time: 10 ns

Fast access time for quick data retrieval and processing.

Technical Specifications

SRAM AS7C351232-10BINTR attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

90

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

AS7C351232-10BINTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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