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IS66WVH8M8BLL-100B1LI-TR

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,404 parts In-Stock

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Chip Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 624 parts In-Stock

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$17.094

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Lixinc

USA . 6,791 parts In-Stock

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Continental Prestige Electronics

USA . 4,365 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Experience unparalleled speed and reliability with the IS66WVH8M8BLL-100B1LI-TR from Integrated Silicon Solution. As a leading manufacturer in the industry, ISS provides top-quality SRAM memory solutions for various applications. Whether you're working on industrial automation, telecommunications, or consumer electronics, this synchronous SRAM offers exceptional performance and efficiency. Say goodbye to slow loading times and data loss, and hello to seamless operation and enhanced productivity. Upgrade your systems today with ISS SRAM for a superior user experience like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs.

Operating Mode: SYNCHRONOUS

Ensures synchronized data transmission and processing.

Nominal Supply Voltage: 3V

Standard voltage that is commonly used, providing stable performance.

Package Style: GRID ARRAY, THIN PROFILE

Space-saving design ideal for compact electronic devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial use.

Memory Density: 67108864 bit

High memory density for storing a large amount of data.

Memory IC Type: PSEUDO STATIC RAM

Combines the benefits of SRAM with the stability of DRAM, providing fast and reliable memory.

Technical Specifications

SRAM IS66WVH8M8BLL-100B1LI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

IS66WVH8M8BLL-100B1LI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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