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70V3589S133BFI

Renesas Electronics

70V3589S133BFI by Renesas Electronics

Renesas Electronics' 70V3589S133BFI is a 64Kx36 MULTI-PORT SRAM with 133 MHz clock frequency, operating at -40 to 85 °C. It has a low profile grid array package and supports synchronous operation. Ideal for industrial applications requiring fast access times and common I/O type.

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Singapore . 1,485 parts In-Stock

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AZTECH Wire

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Aztec Data Supply Inc.

USA . 500 parts In-Stock

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Advanced Electronics

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Microchip USA

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Argo Parts USA

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Overview

Discover the Renesas Electronics 70V3589S133BFI, a top-quality SRAM memory chip designed for a wide range of applications. Renowned for their exceptional craftsmanship and cutting-edge technology, Renesas Electronics delivers unparalleled performance and reliability. Ideal for industrial use, this memory chip boasts a fast clock frequency of 133 MHz and a high memory density of 2359296 bits. With a low profile and fine pitch package style, this chip is perfect for space-constrained designs. Experience seamless data processing and increased efficiency with the Renesas Electronics 70V3589S133BFI.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring reliability and affordability.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enhances data transfer efficiency by synchronizing input and output operations, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with common supply voltages, making it versatile and easy to integrate into different systems.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with higher temperatures, ensuring reliable operation under challenging conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, making it energy-efficient and fast.

Memory IC Type: MULTI-PORT SRAM

Multi-port SRAM design enables simultaneous access to multiple memory locations, increasing data processing speed and efficiency.

Technical Specifications

SRAM 70V3589S133BFI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

15 ns

Additional Features:

FLOW-THROUGH OR PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

JESD-30 Code:

S-PBGA-B208

JESD-609 Code:

e0

Length:

15 mm

Memory Density:

2359296 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

208

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA208,17X17,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

2.5/3.3,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.7 mm

Maximum Standby Current:

.04 Amp

Minimum Standby Voltage:

3.15 V

Sub-Category:

SRAMs

Maximum Supply Current:

480 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn63Pb37)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

15 mm

Trade Compliance

70V3589S133BFI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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