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70V35L20PFGI8

Renesas Electronics

70V35L20PFGI8 by Renesas Electronics

Renesas Electronics 70V35L20PFGI8 is a DUAL-PORT SRAM with 8KX18 organization, operating at 3.3V. It features a fast access time of 20ns and offers parallel interface for high-speed data transfer. Ideal for industrial applications requiring reliable memory storage in compact spaces.

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1k+

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VNN

France . 2,314 parts In-Stock

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Ampacity Inc.

Singapore . 324 parts In-Stock

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$3.000

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AZTECH Wire

Italy . 326 parts In-Stock

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Component Stockers USA

USA . 545 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 20,811 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Discover the unparalleled quality and reliability of Renesas Electronics with the 70V35L20PFGI8 Dual-Port SRAM. This cutting-edge memory IC offers seamless parallel operation, lightning-fast access time of 20 ns, and a generous memory density of 147456 bits. Ideal for industrial applications, this low-profile, fine-pitch package ensures optimal performance even in extreme temperatures ranging from -40°C to 85°C. Trust Renesas Electronics for superior technology that exceeds expectations. Elevate your projects with the 70V35L20PFGI8 and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability while keeping the weight of the product low.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for efficient performance and power consumption.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

Compact design with reduced height, suitable for space-constrained applications.

Temperature Grade: INDUSTRIAL

Can withstand a wide range of operating temperatures, making it suitable for industrial environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Memory IC Type: DUAL-PORT SRAM

Dual-port feature allows for simultaneous access from multiple sources, enhancing efficiency.

Maximum Access Time: 20 ns

Provides fast access to data, improving overall performance.

Technical Specifications

SRAM 70V35L20PFGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

20 ns

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Memory Density:

147456 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX18

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

70V35L20PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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