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IS61VPS204836B-250B3LI-TR

Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates in synchronous mode at 2.5V, with a max access time of 2.8 ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

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Vyrian

USA . 17,798 parts In-Stock

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Nova Conductors

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Corohmni

South Africa . 539 parts In-Stock

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$2.061

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Aztec Data Supply Inc.

USA . 270 parts In-Stock

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AZTECH Wire

Italy . 360 parts In-Stock

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Continental Prestige Electronics

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Overview

Enhance your electronics with the IS61VPS204836B-250B3LI-TR from Integrated Silicon Solution, a leading manufacturer in the industry. This CACHE SRAM memory module offers unparalleled performance and reliability, ideal for industrial applications that require fast access times and high memory density. With a synchronous operating mode and a 2MX36 organization, this product ensures seamless functionality and efficient data storage. Upgrade your systems today with the cutting-edge technology of IS61VPS204836B-250B3LI-TR.

Feature Benefit Bullets

Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Surface Mount: YES

The surface mount feature allows for easy installation and saves space on the PCB.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space in the design.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures reliable and synchronized data transfer.

Nominal Supply Voltage (Vsup): 2.5V

The nominal supply voltage of 2.5V provides stable power to the device.

No. of Terminals: 165

The high number of terminals allows for efficient connectivity and data transfer.

Package Style: GRID ARRAY, THIN PROFILE

The grid array and thin profile design make this product ideal for space-constrained applications.

Maximum Operating Temperature: 85°C

The high maximum operating temperature ensures reliability in harsh environments.

Organization: 2MX36

The 2MX36 organization provides a large memory capacity for storing data.

Minimum Operating Temperature: -40°C

The low minimum operating temperature allows this product to be used in a wide range of environments.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to connect to the PCB.

Maximum Seated Height: 1.2mm

The low maximum seated height is beneficial for applications with height restrictions.

Width: 13mm

The compact width of 13mm saves space in the design.

Minimum Supply Voltage (Vsup): 2.375V

The minimum supply voltage of 2.375V ensures the product can operate over a wide voltage range.

Length: 15mm

The length of 15mm provides a compact and space-saving form factor.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in industrial environments.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high-speed operation.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for faster data processing.

Terminal Form: BALL

The ball terminal form ensures a secure and reliable connection to the PCB.

No. of Words: 2097152 words

The high number of words allows for storing large amounts of data.

Memory Width: 36

The memory width of 36 bits enables efficient data processing.

Terminal Pitch: 1mm

The small terminal pitch of 1mm saves space on the PCB.

No. of Words Code: 2M

The 2M words code provides a large memory capacity.

Maximum Supply Voltage (Vsup): 2.625V

The maximum supply voltage of 2.625V ensures safe operation under varying voltage conditions.

Memory Density: 75497472 bits

The high memory density allows for storing a large amount of data in a compact space.

Memory IC Type: CACHE SRAM

The cache SRAM memory IC type offers fast access times and efficient data retrieval.

Maximum Access Time: 2.8ns

The fast maximum access time of 2.8ns ensures quick data retrieval and processing.

Technical Specifications

SRAM IS61VPS204836B-250B3LI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

2.8 ns

Additional Features:

PIPELINED ARCHITECTURE

JESD-30 Code:

R-PBGA-B165

Length:

15 mm

Memory Density:

75497472 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

165

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2.625 V

Minimum Supply Voltage (Vsup):

2.375 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

13 mm

Trade Compliance

IS61VPS204836B-250B3LI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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