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IS61WV204816BLL-10TLI-TR

Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at 3V, has a max access time of 10ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,242 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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ComSIT Distribution GmbH

Germany . 18 parts In-Stock

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AZTECH Wire

Italy . 884 parts In-Stock

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$19.489

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Bastille Electronics

Australia . 52 parts In-Stock

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Overview

Unlock the power of reliable and high-performance memory with the IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS provides top-quality SRAM products perfect for various applications. With its small outline, thin profile package design and industrial temperature grade, this memory module offers unmatched value and benefits to customers seeking fast and efficient data storage solutions. Trust ISS to deliver exceptional performance and reliability for your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating efficient assembly.

Operating Mode: ASYNCHRONOUS

Enables independent read and write operations, making the product versatile and suitable for various applications.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, ensuring compatibility with a wide range of systems.

Memory Density: 33554432 bit

Offers high memory capacity, allowing for storage of large amounts of data and improving overall performance.

Maximum Access Time: 10 ns

Provides fast access to data, enhancing the speed and responsiveness of the product.

Technical Specifications

SRAM IS61WV204816BLL-10TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

IS61WV204816BLL-10TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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