Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CY7C1021BN-15VXIT
Cypress Semiconductor
CY7C1021BN-15VXIT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time. Operating at 5V, it features a small outline package and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.
15 ns
R-PDSO-J44
e4
28.575 mm
1048576 bit
STANDARD SRAM
16
1
44
65536 words
64K
ASYNCHRONOUS
85 Cel
-40 Cel
64KX16
PLASTIC/EPOXY
SOJ
RECTANGULAR
SMALL OUTLINE
PARALLEL
Not Qualified
3.7592 mm
5.5 V
4.5 V
5
YES
CMOS
INDUSTRIAL
NICKEL PALLADIUM GOLD
J BEND
1.27 mm
DUAL
10.16 mm
CY7C1019CV33-12ZXCT
CY7C1019CV33-12ZXCT by Cypress: 128KX8 SRAM with 3.3V, 12ns access time, and 1.27mm terminal pitch. Ideal for commercial applications requiring fast, asynchronous memory operations in a small outline package.
12 ns
R-PDSO-G32
e3
20.95 mm
8
3
32
131072 words
128K
70 Cel
0 Cel
128KX8
TSOP2
SMALL OUTLINE, THIN PROFILE
260
1.2 mm
3.63 V
2.97 V
3.3
COMMERCIAL
MATTE TIN
GULL WING
20
CY7C1021BN-15VXCT
CY7C1021BN-15VXCT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It is used in commercial applications, featuring a small outline package and J bend terminal form for surface mount assembly.
CY7C1518KV18-250BZXC
DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 250 MHz;
.45 ns
PIPELINED ARCHITECTURE
250 MHz
COMMON
R-PBGA-B165
e1
15 mm
75497472 bit
DDR SRAM
18
165
4194304 words
4M
SYNCHRONOUS
4MX18
3-STATE
LBGA
BGA165,11X15,40
GRID ARRAY, LOW PROFILE
1.5/1.8,1.8
1.4 mm
1.7 V
SRAMs
430 mA
1.9 V
1.8
TIN SILVER COPPER
BALL
1 mm
BOTTOM
13 mm
BQ4010LYMA-70N
Texas Instruments
BQ4010LYMA-70N by Texas Instruments is an 8Kx8 SRAM with 3.3V supply, operating asynchronously at -40 to 85°C. It features a parallel interface, 70ns access time, and industrial temperature grade. Ideal for non-volatile memory applications in microelectronic assemblies due to its compact size and low power consumption of 30mA max.
70 ns
R-XDMA-T28
37.72 mm
65536 bit
NON-VOLATILE SRAM MODULE
28
8192 words
8K
8KX8
UNSPECIFIED
DIP
DIP28,.6
MICROELECTRONIC ASSEMBLY
NOT SPECIFIED
9.53 mm
.001 Amp
30 mA
3.6 V
3 V
NO
THROUGH-HOLE
2.54 mm
18.415 mm
CY62256VNLL-70ZIT
CY62256VNLL-70ZIT by Cypress is a 32Kx8 SRAM with 70ns access time, operating at 3V. It has a small outline package suitable for industrial applications. This CMOS memory IC offers parallel operation and 262144-bit memory density.
R-PDSO-G28
11.8 mm
262144 bit
32768 words
32K
32KX8
TSOP1
2.7 V
.55 mm
8 mm
CY7C1480V33-200AXCT
CY7C1480V33-200AXCT by Cypress Semiconductor is a 3.3V CACHE SRAM with 2MX36 organization, operating synchronously at 70°C. It has a memory density of 75497472 bit and offers fast access time of 3 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.
3 ns
R-PQFP-G100
e3/e4
20 mm
CACHE SRAM
36
100
2097152 words
2M
2MX36
LQFP
FLATPACK, LOW PROFILE
1.6 mm
3.135 V
MATTE TIN/NICKEL PALLADIUM GOLD
.65 mm
QUAD
14 mm
MT45W2MW16BGB-701IT
Micron Technology
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
SYNCHRONOUS BURST MODE ALSO POSSIBLE
R-PBGA-B54
33554432 bit
PSEUDO STATIC RAM
54
2MX16
VFBGA
BGA54,6X9,30
GRID ARRAY
1.8,1.8/3.3
.00011 Amp
Other Memory ICs
40 mA
1.95 V
Tin/Silver/Copper (Sn/Ag/Cu)
.75 mm
30
6 mm
MT45W2MW16PGA-70IT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;
R-PBGA-B48
48
BGA48,6X8,30
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1.8,1.8/3
20 mA
CD74HCT670M96G4
CD74HCT670M96G4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It has a max access time of 53ns and operates in parallel mode. This memory IC is ideal for military-grade applications requiring fast and reliable data storage.
53 ns
R-PDSO-G16
9.9 mm
16 bit
4
4 words
125 Cel
-55 Cel
4X4
SOP
SOP16,.25
2/6
1.75 mm
MILITARY
3.9 mm
CD74HCT670MTG4
STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MT45W8MW16BGX-856AT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;
85 ns
10 mm
134217728 bit
8388608 words
8M
105 Cel
8MX16
IS61WV51216BLL-10MLI
Integrated Silicon Solution
IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.
10 ns
11 mm
8388608 bit
524288 words
512K
512KX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
2.5/3.3
.02 Amp
1.2 V
95 mA
2.4 V
9 mm
CY7C1061BV33-8ZXI
CY7C1061BV33-8ZXI by Cypress Semiconductor is a 3.3V, 1MX16 SRAM with 8ns access time. It operates in industrial temperature range (-40 to 85°C) and has a memory density of 16777216 bits. Ideal for applications requiring fast parallel memory access in compact designs.
8 ns
R-PDSO-G54
22.415 mm
16777216 bit
1048576 words
1M
1MX16
Matte Tin (Sn)
.8 mm
DS38464-070
Maxim Integrated
NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;
R-XSMA-N72
e0
2621440 bit
40
72
64KX40
SIMM
TIN LEAD
NO LEAD
SINGLE
AS6C4008-55BIN
Alliance Memory
Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.
55 ns
R-PBGA-B36
4194304 bit
512KX8
BGA36,6X8,30
3/5
.00003 Amp
2 V
60 mA
AS6C4008-55STIN
Alliance Memory's AS6C4008-55STIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package with dual terminals and common I/O type. With low standby voltage of 2V and power consumption of 60mA, it offers reliable performance in various electronic devices.
LSSOP
TSSOP32,.56,20
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
1.25 mm
.5 mm
AS6C4008-55TIN
Alliance Memory's AS6C4008-55TIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 524288 words and parallel interface, it offers reliable memory storage in compact systems.
18.4 mm
TSSOP32,.8,20
AS6C1008-55TIN
Alliance Memory's AS6C1008-55TIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 131072 words and 1048576-bit memory density, this CMOS technology-based chip offers reliable performance in various electronic devices.
3/3.3
1.5 V
IS61WV25616BLS-25TLI
IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.
25 ns
R-PDSO-G44
262144 words
256K
256KX16
TSOP44,.46,32
.009 Amp
25 mA
10
MT45W2MW16BGB-701ITTR
BQ4013LYMA-70N
NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
R-PDMA-P32
42.8 mm
DIP32,.6
50 mA
PIN/PEG
15.24 mm
BQ4015LYMA-70N
BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.
BQ4011LYMA-70N
BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.
R-PDMA-P28
IS61WV51232BLL-10BLI
IS61WV51232BLL-10BLI by Integrated Silicon Solution is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a low profile grid array package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 16Mbit, it offers high-speed data retrieval in harsh environments.
R-PBGA-B90
90
512KX32
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.45 mm
70V631S12PRFI8
Integrated Device Technology
70V631S12PRFI8 by Integrated Device Technology is a 256Kx18 MULTI-PORT SRAM with 3.3V nominal voltage, operating in synchronous mode. It features a low profile flatpack package and offers fast access time of 12 ns, making it ideal for industrial applications requiring high-speed memory solutions.
R-PQFP-G128
4718592 bit
MULTI-PORT SRAM
2
128
256KX18
LFQFP
QFP128,.63X.87,20
FLATPACK, LOW PROFILE, FINE PITCH
225
2.5/3.3,3.3
.015 Amp
3.15 V
515 mA
3.45 V
71V25761S183BGI8
71V25761S183BGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3-STATE output. It has a package style of GRID ARRAY and is suitable for industrial applications requiring fast access times and high memory density.
3.3 ns
183 MHz
R-PBGA-B119
22 mm
119
128KX36
BGA
BGA119,7X17,50
2.5,3.3
2.36 mm
.035 Amp
3.14 V
350 mA
3.465 V
71V3557S75BGI8
71V3557S75BGI8 by Integrated Device Technology is a 128Kx36 ZBT SRAM with 7.5ns access time, operating at 3.3V. It features synchronous operation and a memory density of 4718592 bits, suitable for industrial applications requiring fast and reliable parallel memory access.
7.5 ns
ZBT SRAM
71V35761S183BGG8
71V35761S183BGG8 by Integrated Device Technology is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz clock frequency. It features a 3-STATE output and operates at a voltage of 3.3V, making it suitable for high-speed memory applications in commercial-grade devices.
.03 Amp
340 mA
71V35761S183BGI8
71V35761S183BGI8 by Integrated Device Technology is a CACHE SRAM with 128KX36 organization, operating at 183 MHz clock frequency. It has a max access time of 3.3 ns and is suitable for industrial applications requiring fast synchronous memory solutions.
CY22E016L-SZ45XC
CY22E016L-SZ45XC by Cypress Semiconductor is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it has an access time of 45ns and is ideal for commercial applications requiring non-volatile memory solutions. The package style is small outline, with Gull Wing terminals and a temperature range of 0-70°C.
45 ns
17.905 mm
16384 bit
NON-VOLATILE SRAM
2048 words
2K
2KX8
2.67 mm
7.505 mm
CY7C1059DV33-12ZSXI
CY7C1059DV33-12ZSXI by Cypress Semiconductor is a 1MX8 SRAM with 3.3V supply, 12ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a small outline package.
1MX8
1.194 mm
100 mA
AS7C31026C-12BIN
Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.
e3/e6
1.34 mm
LH5116-10F
Sharp Corporation
The Sharp LH5116-10F is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it offers a max access time of 100ns. Ideal for commercial applications, this CMOS technology-based IC has a rectangular package shape and operates in asynchronous mode.
100 ns
R-PDIP-T24
31 mm
24
IN-LINE
5.3 mm
M48Z512BV-85PM1
STMicroelectronics
M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.
.003 Amp
CY7C1470BV25-200BZI
ZBT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B165;
200 MHz
17 mm
2.5
2.38 V
450 mA
2.625 V
2.375 V
74HC670D,653
NXP Semiconductors
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 4 words;
59 ns
6 V
AUTOMOTIVE
Nickel/Palladium/Gold (Ni/Pd/Au)
74HC670DB,112
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Power Supplies (V): 2/6;
6.2 mm
SSOP
SSOP16,.3
SMALL OUTLINE, SHRINK PITCH
2 mm
74HC670DB,118
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Length: 6.2 mm;
74HC670N,652
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;
R-PDIP-T16
21.6 mm
DIP16,.3
4.7 mm
7.62 mm
74HCT670D,652
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Access Time: 60 ns;
60 ns
74HCT670D,653
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
PCF8570P/F5,112
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e4;
2-WIRE I2C SERIAL INTERFACE
.1 MHz
R-PDIP-T8
9.5 mm
2048 bit
256 words
256
256X8
OPEN-DRAIN
DIP8,.3
SERIAL
4.2 mm
.0000004 Amp
1 V
.2 mA
2.5 V
PCF8570T/F5,512
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;
3400 ns
R-PDSO-G8
7.55 mm
SOP8,.4
2.65 mm
7.5 mm
PCF8570T/F5,518
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;
IS62WV1288BLL-55HLI-TR
IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time. Operating at 3V, it's ideal for industrial applications requiring fast and reliable memory storage. With a compact size of 11.8mm x 8mm and low power consumption, it's suitable for various embedded systems.
IS62WV1288BLL-55QLI-TR
IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and 1048576-bit memory density, it offers fast data retrieval for various electronic devices.
20.445 mm
3 mm
11.305 mm
IS62WV1288BLL-55TLI-TR
IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution is a 128KX8 SRAM with 55 ns access time, operating at 3.6 V max voltage. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With 131072 words and memory density of 1048576 bits, this CMOS technology-based SRAM offers reliable parallel data storage solutions.
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