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IS62WV1288BLL-55TLI-TR

Integrated Silicon Solution

IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution

IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution is a 128KX8 SRAM with 55 ns access time, operating at 3.6 V max voltage. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With 131072 words and memory density of 1048576 bits, this CMOS technology-based SRAM offers reliable parallel data storage solutions.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 14,690 parts In-Stock

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Vyrian

USA . 6,873 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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Lantek

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300

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AZTECH Wire

Italy . 364 parts In-Stock

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$19.623

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Authorized Procurement Solutions

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Aranea Global

USA . 500 parts In-Stock

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Kepictronics

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GreenTree Electronics

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Overview

Unlock the power of reliable and high-performance memory with the IS62WV1288BLL-55TLI-TR from Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch SRAM products like this one that offer unmatched quality and durability. Ideal for industrial applications, this SRAM module operates asynchronously with a nominal supply voltage of 3V, providing seamless performance even in extreme temperatures. With a memory density of 1,048,576 bits and a maximum access time of 55ns, this product ensures fast and efficient data storage and retrieval. Upgrade your systems with ISS's cutting-edge technology and experience unparalleled benefits and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability to the product, ensuring a long lifespan.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent data access, making the product suitable for various applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes the product energy-efficient and suitable for low power consumption applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the product can withstand harsh environmental conditions.

Technology: CMOS

Utilizing CMOS technology ensures high performance, low power consumption, and compatibility with a wide range of devices.

Memory IC Type: STANDARD SRAM

Being a standard SRAM memory IC type, this product offers reliable and fast data storage and retrieval capabilities.

Technical Specifications

SRAM IS62WV1288BLL-55TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

IS62WV1288BLL-55TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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