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AS7C31026C-12BIN

Alliance Memory

AS7C31026C-12BIN by Alliance Memory

Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 3,897 parts In-Stock

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3,897

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Vyrian

USA . 2,320 parts In-Stock

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2,320

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 450 parts In-Stock

1+ parts

$6.618

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450

$6.618

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Continental Prestige Electronics

USA . 5,854 parts In-Stock

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Argo Parts USA

USA . 3,228 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the AS7C31026C-12BIN from Alliance Memory. As a leading manufacturer in the industry, Alliance Memory delivers top-of-the-line SRAM products that cater to various applications. Offering a seamless experience with its asynchronous operating mode and industrial-grade temperature range, this memory IC provides exceptional value and performance. Trust Alliance Memory for all your memory needs and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material ensures durability and reliability for long-term use.

Surface Mount: YES

Surface mount feature enables easy and efficient installation onto PCBs.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V offers energy efficiency and compatibility with a wide range of systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Grid array, low profile, and fine pitch package style optimizes space utilization and enhances performance in compact designs.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in harsh environmental conditions.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation.

Memory IC Type: STANDARD SRAM

Standard SRAM memory IC type offers fast and reliable read/write operations for efficient data storage.

Technical Specifications

SRAM AS7C31026C-12BIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

12 ns

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e3/e6

Length:

8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Width:

6 mm

Trade Compliance

AS7C31026C-12BIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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