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71V3557S75BGI8

Integrated Device Technology

71V3557S75BGI8 by Integrated Device Technology

71V3557S75BGI8 by Integrated Device Technology is a 128Kx36 ZBT SRAM with 7.5ns access time, operating at 3.3V. It features synchronous operation and a memory density of 4718592 bits, suitable for industrial applications requiring fast and reliable parallel memory access.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 7,037 parts In-Stock

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Nova Conductors

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Semicontronic

India . 953 parts In-Stock

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$4.875

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$4.850

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AZTECH Wire

Italy . 820 parts In-Stock

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Ampacity Inc.

Singapore . 583 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,006 parts In-Stock

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Continental Prestige Electronics

USA . 6,807 parts In-Stock

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Microchip USA

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Argo Parts USA

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Aranea Global

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Overview

Experience unparalleled reliability and performance with the 71V3557S75BGI8 from Integrated Device Technology. As a leading manufacturer in the industry, IDT's SRAM category offers cutting-edge technology for various applications. This product, with its synchronous operating mode and industrial temperature grade, provides customers with exceptional value and benefits. Trust in the quality of IDT's memory IC type ZBT SRAM and enjoy the advantage of fast access time and high memory density. Upgrade your systems with the 71V3557S75BGI8 for superior performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, making it suitable for various operating conditions.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfer within the memory, ensuring reliable and efficient operation.

Nominal Supply Voltage: 3.3V

Efficiently operates at a standard voltage level, compatible with many systems and devices.

Maximum Operating Temperature: 85 °C

Offers high temperature tolerance, allowing the SRAM to function reliably in industrial environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance, making it an energy-efficient choice.

Memory IC Type: ZBT SRAM

ZBT (Zero Bus Turnaround) technology minimizes delays in data access, enhancing the speed and efficiency of the SRAM.

Maximum Access Time: 7.5 ns

Provides fast access speed, enabling quick retrieval and storage of data.

Technical Specifications

SRAM 71V3557S75BGI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

7.5 ns

JESD-30 Code:

R-PBGA-B119

JESD-609 Code:

e0

Length:

22 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

119

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Qualification:

Not Qualified

Maximum Seated Height:

2.36 mm

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

14 mm

Trade Compliance

71V3557S75BGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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