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71V35761S183BGG8

Integrated Device Technology

71V35761S183BGG8 by Integrated Device Technology

71V35761S183BGG8 by Integrated Device Technology is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz clock frequency. It features a 3-STATE output and operates at a voltage of 3.3V, making it suitable for high-speed memory applications in commercial-grade devices.

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AZTECH Wire

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Overview

Unlock the power of cutting-edge technology with the 71V35761S183BGG8 by Integrated Device Technology. This CACHE SRAM memory module offers unparalleled performance and reliability, perfect for a wide range of applications. With a 128Kx36 organization and synchronous operation, this high-quality product guarantees seamless data processing and storage. Say goodbye to slow loading times and hello to efficient multitasking with the 71V35761S183BGG8. Experience the difference today and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, making it suitable for various environments.

Maximum Clock Frequency (fCLK): 183 MHz

The high clock frequency allows for fast data processing, making the SRAM efficient for high-performance applications.

Input/Output Type: COMMON

Common input/output type simplifies the interface design, making it easier to integrate this SRAM into different systems.

No. of Words: 131072 words

With a large number of words, this SRAM can store a significant amount of data, making it suitable for data-intensive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this SRAM energy-efficient and reliable.

Technical Specifications

SRAM 71V35761S183BGG8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

3.3 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

183 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B119

JESD-609 Code:

e1

Length:

22 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

119

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA119,7X17,50

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.36 mm

Maximum Standby Current:

.03 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

340 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71V35761S183BGG8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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