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CD74HCT670M96G4

Texas Instruments

CD74HCT670M96G4 by Texas Instruments

CD74HCT670M96G4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It has a max access time of 53ns and operates in parallel mode. This memory IC is ideal for military-grade applications requiring fast and reliable data storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,943 parts In-Stock

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Digiode

USA . 2,105 parts In-Stock

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Parana Technologies

USA . 1,117 parts In-Stock

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$4.859

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$5.384

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$4.859

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$5.384

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ChromeModa Solutions

Germany . 968 parts In-Stock

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$5.460

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$4.477

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968

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IDEA Electronic Components Group

UK . 93 parts In-Stock

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$5.460

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$4.914

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93

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$4.914

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AZTECH Wire

Italy . 198 parts In-Stock

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$18.388

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One Stop Electronics

USA . 1,242 parts In-Stock

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$22.000

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Component Stockers USA

USA . 247 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 18,110 parts In-Stock

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Northwest PG Solutions

USA . 1,703 parts In-Stock

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DigiPath Technology Company

USA . 1,073 parts In-Stock

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$4.923

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Corphita

USA . 894 parts In-Stock

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Native Components

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Microchip USA

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Overview

Elevate your projects with the CD74HCT670M96G4 by Texas Instruments, a top-tier manufacturer known for quality and innovation. This Standard SRAM device offers unmatched reliability and performance in a compact package. Ideal for a wide range of applications, this product provides customers with fast access times and versatile memory options. Experience the value and benefits of Texas Instruments' expertise with the CD74HCT670M96G4 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring a long lifespan.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Allows for independent access to each memory location, providing flexibility in data retrieval.

Nominal Supply Voltage / Vsup (V): 5

Suitable voltage level for stable and reliable operation of the SRAM.

Temperature Grade: MILITARY

Designed to withstand harsh environmental conditions, making it ideal for military applications.

Maximum Access Time: 53 ns

Fast access time ensures quick data retrieval, enhancing overall performance of the SRAM.

Technical Specifications

SRAM CD74HCT670M96G4 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

53 ns

JESD-30 Code:

R-PDSO-G16

Length:

9.9 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD74HCT670M96G4 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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