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IS61WV25616BLS-25TLI

Integrated Silicon Solution

IS61WV25616BLS-25TLI by Integrated Silicon Solution

IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.

Median Price

$4.195

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 55 parts In-Stock

1+ parts

$4.195

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55

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Chip Stock

USA . 2,700 parts In-Stock

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2,700

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Vyrian

USA . 2,197 parts In-Stock

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2,197

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Distributors (Availability)

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Continental Prestige Electronics

USA . 5,363 parts In-Stock

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$4.195

100+ parts

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$4.111

5,363

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$4.111

Netroflash

USA . 2,000 parts In-Stock

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$4.195

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Argo Parts USA

USA . 191 parts In-Stock

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$4.195

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191

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AZTECH Wire

Italy . 813 parts In-Stock

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$12.707

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Perfect Parts

USA . 112 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with Integrated Silicon Solution's IS61WV25616BLS-25TLI SRAM memory chip. Designed for industrial applications, this high-quality component offers reliable performance and a wide range of benefits for your projects. With a compact package style and low power consumption, this memory chip delivers exceptional value while meeting the demands of today's advanced electronics. Trust Integrated Silicon Solution to provide top-notch solutions for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection, making the product suitable for various environments.

Surface Mount: YES

Ease of installation and space-saving design make this product convenient for integration into electronic systems.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a commonly used voltage level, ensuring compatibility with other components in the system.

Memory Density: 4194304 bit

High memory density allows for storing a large amount of data, making it ideal for applications that require extensive memory storage.

Maximum Access Time: 25 ns

Fast access time enables quick retrieval of data, improving overall system performance.

Technical Specifications

SRAM IS61WV25616BLS-25TLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

25 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.415 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10.16 mm

Trade Compliance

IS61WV25616BLS-25TLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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