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BQ4015LYMA-70N

Texas Instruments

BQ4015LYMA-70N by Texas Instruments

BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,423 parts In-Stock

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Digiode

USA . 4,426 parts In-Stock

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4,426

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LWI Electronics Inc

India . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,192 parts In-Stock

1+ parts

$4.179

100+ parts

-

1k+ parts

$4.620

10k+ parts

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1,192

$4.179

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$4.620

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DigiPath Technology Company

USA . 2,202 parts In-Stock

1+ parts

$4.601

100+ parts

$4.233

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-

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2,202

$4.601

$4.233

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ChromeModa Solutions

Germany . 6,446 parts In-Stock

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$4.695

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$3.850

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6,446

$4.695

$3.850

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IDEA Electronic Components Group

UK . 120 parts In-Stock

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$4.695

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$4.226

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120

$4.695

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$4.226

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AZTECH Wire

Italy . 838 parts In-Stock

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$19.319

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838

$19.319

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One Stop Electronics

USA . 385 parts In-Stock

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$24.000

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385

$24.000

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Native Components

USA . 847 parts In-Stock

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$758.300

100+ parts

$743.134

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$735.551

10k+ parts

$727.968

847

$758.300

$743.134

$735.551

$727.968

Northwest PG Solutions

USA . 2,110 parts In-Stock

1+ parts

$834.130

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$834.130

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Microchip USA

USA . 5,150 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Corphita

USA . 3,611 parts In-Stock

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Perfect Parts

USA . 3,059 parts In-Stock

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Overview

Elevate your electronic devices with the BQ4015LYMA-70N by Texas Instruments, a top-tier SRAM module designed for unparalleled performance and reliability. With a reputation for excellence in semiconductor manufacturing, Texas Instruments delivers cutting-edge technology that ensures optimal functionality and durability. Ideal for industrial applications, this non-volatile memory solution offers seamless operation and high-speed access, providing customers with a valuable asset that enhances the efficiency and reliability of their systems. Experience the difference with the BQ4015LYMA-70N and elevate your products to new heights of performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible access to data, making it suitable for a wide range of applications.

Nominal Supply Voltage (Vsup): 3.3V

Low nominal supply voltage of 3.3V helps in reducing power consumption and heat generation, making it energy-efficient.

Maximum Operating Temperature: 85°C

High maximum operating temperature of 85°C ensures reliable performance even in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and noise immunity, making the product efficient and reliable.

Memory IC Type: NON-VOLATILE SRAM MODULE

Non-volatile SRAM module retains data even when power is turned off, ensuring data integrity and security.

Maximum Access Time: 70 ns

Fast maximum access time of 70 ns ensures quick and efficient data retrieval, enhancing overall system performance.

Technical Specifications

SRAM BQ4015LYMA-70N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDMA-P32

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.001 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BQ4015LYMA-70N Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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