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BQ4011MA-150N

Texas Instruments

BQ4011MA-150N by Texas Instruments

BQ4011MA-150N by Texas Instruments is a 32Kx8 SRAM module with 262144-bit memory density. It operates asynchronously at temperatures ranging from -40 to 85°C, making it suitable for industrial applications. With a max access time of 150ns and parallel interface, it offers reliable non-volatile memory storage in a compact MICROELECTRONIC ASSEMBLY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,225 parts In-Stock

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Vyrian

USA . 3,188 parts In-Stock

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Native Components

USA . 854 parts In-Stock

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$1.651

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854

$1.651

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Northwest PG Solutions

USA . 1,192 parts In-Stock

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$1.816

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$1.816

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Parana Technologies

USA . 2,277 parts In-Stock

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$1.872

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$2.417

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$1.872

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ChromeModa Solutions

Germany . 4,095 parts In-Stock

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$2.103

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$1.724

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$2.103

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IDEA Electronic Components Group

UK . 1,719 parts In-Stock

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$2.103

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$1.893

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AZTECH Wire

Italy . 548 parts In-Stock

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$12.539

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One Stop Electronics

USA . 815 parts In-Stock

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$27.000

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DigiPath Technology Company

USA . 1,382 parts In-Stock

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$1.896

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Corphita

USA . 1,359 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the BQ4011MA-150N, a high-performance SRAM module designed for industrial applications. With a memory density of 262144 bits and a maximum access time of 150 ns, this non-volatile memory module offers fast and efficient data storage solutions. Benefit from the advanced technology and precision engineering of Texas Instruments while enjoying seamless operation in harsh environments thanks to its industrial-grade temperature rating. Upgrade your systems with the BQ4011MA-150N and unlock new possibilities for your projects.

Feature Benefit Bullets

Package Shape: RECTANGULAR

This package shape allows for easy integration into electronic circuits and systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and simplicity in data transfer and processing.

Nominal Supply Voltage / Vsup (V): 5

Operates at standard voltage levels, ensuring compatibility with many systems.

No. of Terminals: 28

Sufficient number of terminals for connecting to other components in a circuit.

Maximum Operating Temperature: 85 °C

Capable of operating in higher temperature environments, suitable for industrial applications.

Organization: 32KX8

Organized in a 32K x 8 configuration, providing a balance of storage capacity and data width.

Minimum Operating Temperature: -40 °C

Capable of operating in low-temperature environments, ensuring reliability in various conditions.

Minimum Supply Voltage (Vsup): 4.75 V

Operates at a lower voltage threshold, potentially saving energy while maintaining performance.

Temperature Grade: INDUSTRIAL

Designed for use in industrial settings, meeting the required temperature and reliability standards.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Parallel or Serial: PARALLEL

Parallel interface allows for high-speed data transfer and processing.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in electronic circuits.

No. of Words: 32768 words

Offers a large storage capacity for storing data and instructions.

Memory Width: 8

Data width of 8 bits allows for efficient processing of data.

Memory Density: 262144 bit

High memory density in a compact form factor, optimizing space usage in a circuit design.

Memory IC Type: NON-VOLATILE SRAM MODULE

Non-volatile memory retains data even when power is turned off, ensuring data persistence.

Maximum Access Time: 150 ns

Fast access time enables quick retrieval of data, enhancing overall system performance.

Technical Specifications

SRAM BQ4011MA-150N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

JESD-30 Code:

R-XDMA-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

BQ4011MA-150N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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