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BQ4010YEBZ-70N

Texas Instruments

BQ4010YEBZ-70N by Texas Instruments

BQ4010YEBZ-70N by Texas Instruments is an 8Kx8 SRAM module with a memory density of 65536 bits. It operates asynchronously at a max temperature of 85°C, with a supply voltage range of 4.5V to 5.5V. Ideal for industrial applications requiring fast access times and low standby current consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,150 parts In-Stock

1+ parts

-

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7,150

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Digiode

USA . 2,263 parts In-Stock

1+ parts

-

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1k+ parts

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2,263

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 754 parts In-Stock

1+ parts

$2.087

100+ parts

$193.814

1k+ parts

$1.878

10k+ parts

-

754

$2.087

$193.814

$1.878

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DigiPath Technology Company

USA . 81 parts In-Stock

1+ parts

$2.298

100+ parts

-

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81

$2.298

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ChromeModa Solutions

Germany . 947 parts In-Stock

1+ parts

$2.345

100+ parts

$1.923

1k+ parts

-

10k+ parts

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947

$2.345

$1.923

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IDEA Electronic Components Group

UK . 423 parts In-Stock

1+ parts

$2.345

100+ parts

-

1k+ parts

$2.110

10k+ parts

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423

$2.345

-

$2.110

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Northwest PG Solutions

USA . 1,918 parts In-Stock

1+ parts

$3.130

100+ parts

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1,918

$3.130

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One Stop Electronics

USA . 1,371 parts In-Stock

1+ parts

$7.000

100+ parts

-

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1,371

$7.000

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AZTECH Wire

Italy . 786 parts In-Stock

1+ parts

$18.101

100+ parts

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786

$18.101

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Corphita

USA . 2,573 parts In-Stock

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2,573

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Native Components

USA . 935 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$2.760

10k+ parts

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935

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$2.760

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Overview

Enhance your electronic projects with the BQ4010YEBZ-70N by Texas Instruments, a top-quality SRAM module that offers unparalleled reliability and performance. Designed by a trusted manufacturer in the industry, this product is ideal for a wide range of applications. With its advanced technology and industrial-grade temperature rating, this memory IC provides customers with exceptional value and benefits. Upgrade your devices today and experience the advantages of the BQ4010YEBZ-70N.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient and compact packaging, making it easier to integrate into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to different memory locations, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with a wide range of systems and components.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly ensures high precision and reliability in packaging, reducing the risk of electrical interference or damage.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product is suitable for industrial applications where temperature fluctuations are common.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the SRAM module energy-efficient and reliable.

No. of Words: 8192 words

Having a high number of words allows for storing a large amount of data, making it ideal for applications requiring extensive memory capacity.

Memory IC Type: NON-VOLATILE SRAM MODULE

Non-volatile storage ensures that data is retained even when power is removed, offering data security and integrity.

Technical Specifications

SRAM BQ4010YEBZ-70N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDMA-T28

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

MODULE,34LEAD,1.0

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.001 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

BQ4010YEBZ-70N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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