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BQ4010YMA-85N

Texas Instruments

BQ4010YMA-85N by Texas Instruments

BQ4010YMA-85N by Texas Instruments is an 8Kx8 SRAM module with a 5V supply voltage, operating in asynchronous mode. With a max operating temperature of 85°C, it offers fast access time of 85ns and low standby current of 0.004A. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

$19.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 28 parts In-Stock

1+ parts

$106.790

100+ parts

-

1k+ parts

-

10k+ parts

-

28

$106.790

-

-

-

Rochester

USA . 212 parts In-Stock

1+ parts

-

100+ parts

$15.200

1k+ parts

$13.600

10k+ parts

$12.800

212

-

$15.200

$13.600

$12.800

Verical

USA . 202 parts In-Stock

1+ parts

-

100+ parts

$19.000

1k+ parts

$17.000

10k+ parts

$16.000

202

-

$19.000

$17.000

$16.000

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,865 parts In-Stock

1+ parts

$16.046

100+ parts

-

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-

10k+ parts

-

4,865

$16.046

-

-

-

Vyrian

USA . 8,451 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,451

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-

-

-

DigiKey Marketplace

USA . 237 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

237

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 112 parts In-Stock

1+ parts

$3.066

100+ parts

-

1k+ parts

-

10k+ parts

-

112

$3.066

-

-

-

Parana Technologies

USA . 2,321 parts In-Stock

1+ parts

$5.202

100+ parts

-

1k+ parts

$5.811

10k+ parts

-

2,321

$5.202

-

$5.811

-

DigiPath Technology Company

USA . 297 parts In-Stock

1+ parts

$5.728

100+ parts

$5.270

1k+ parts

-

10k+ parts

-

297

$5.728

$5.270

-

-

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$5.757

100+ parts

$5.239

1k+ parts

$4.721

10k+ parts

-

600

$5.757

$5.239

$4.721

-

ChromeModa Solutions

Germany . 5,267 parts In-Stock

1+ parts

$5.845

100+ parts

$4.793

1k+ parts

-

10k+ parts

-

5,267

$5.845

$4.793

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IDEA Electronic Components Group

UK . 2,187 parts In-Stock

1+ parts

$5.845

100+ parts

-

1k+ parts

$5.260

10k+ parts

-

2,187

$5.845

-

$5.260

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Corphita

USA . 695 parts In-Stock

1+ parts

$15.201

100+ parts

-

1k+ parts

-

10k+ parts

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695

$15.201

-

-

-

Native Components

USA . 695 parts In-Stock

1+ parts

$127.256

100+ parts

-

1k+ parts

-

10k+ parts

$122.165

695

$127.256

-

-

$122.165

Northwest PG Solutions

USA . 701 parts In-Stock

1+ parts

$139.981

100+ parts

-

1k+ parts

-

10k+ parts

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701

$139.981

-

-

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Glotronic Ltd.

UK . 3,790 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,790

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Microchip USA

USA . 399 parts In-Stock

1+ parts

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399

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Overview

Enhance your electronic designs with the BQ4010YMA-85N by Texas Instruments, a top-quality SRAM module that offers reliability and performance. Manufactured by industry leader Texas Instruments, this product is designed for industrial applications, ensuring durability and efficiency. With a memory density of 65536 bits and a fast access time of 85 ns, this module provides seamless operation for your projects. Upgrade your systems with the BQ4010YMA-85N and experience enhanced functionality and superior performance like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate into various electronic systems.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of each memory component, increasing efficiency.

Nominal Supply Voltage / Vsup (V): 5

Stable and commonly used supply voltage for reliable performance.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Compact and efficient packaging for space-constrained applications.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with high temperature requirements.

Parallel or Serial: PARALLEL

Parallel interface offers high-speed data transfer for quick access.

Technology: CMOS

Low power consumption and high noise immunity for efficient operation.

Memory Density: 65536 bit

High memory density for storing large amounts of data in a compact space.

Memory IC Type: NON-VOLATILE SRAM MODULE

Retains data even without power, ensuring data integrity and reliability.

Maximum Access Time: 85 ns

Fast access time for quick retrieval of data, enhancing overall performance.

Technical Specifications

SRAM BQ4010YMA-85N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDMA-T28

Length:

37.72 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

UNSPECIFIED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

9.53 mm

Maximum Standby Current:

.004 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

75 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

18.415 mm

Trade Compliance

BQ4010YMA-85N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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