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BQ4011LYMA-70N

Texas Instruments

BQ4011LYMA-70N by Texas Instruments

BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,893 parts In-Stock

1+ parts

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2,893

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Vyrian

USA . 2,039 parts In-Stock

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2,039

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,775 parts In-Stock

1+ parts

$3.905

100+ parts

-

1k+ parts

$4.379

10k+ parts

-

1,775

$3.905

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$4.379

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ChromeModa Solutions

Germany . 5,198 parts In-Stock

1+ parts

$4.388

100+ parts

$3.598

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5,198

$4.388

$3.598

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IDEA Electronic Components Group

UK . 1,899 parts In-Stock

1+ parts

$4.388

100+ parts

-

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$3.949

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1,899

$4.388

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$3.949

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AZTECH Wire

Italy . 228 parts In-Stock

1+ parts

$4.909

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228

$4.909

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One Stop Electronics

USA . 623 parts In-Stock

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$13.000

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623

$13.000

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Ampacity Inc.

Singapore . 1,037 parts In-Stock

1+ parts

$20.000

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1,037

$20.000

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DigiPath Technology Company

USA . 1,845 parts In-Stock

1+ parts

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100+ parts

$3.956

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1,845

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$3.956

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Northwest PG Solutions

USA . 1,511 parts In-Stock

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1,511

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Corphita

USA . 1,086 parts In-Stock

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1,086

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Native Components

USA . 966 parts In-Stock

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966

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Microchip USA

USA . 460 parts In-Stock

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460

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Overview

Enhance your electronic projects with the BQ4011LYMA-70N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability. This SRAM module is perfect for various applications, providing seamless performance and efficient operation. With its compact size and industrial-grade temperature range, this memory module offers exceptional value and benefits to customers. Upgrade your designs with the BQ4011LYMA-70N and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures efficient power consumption.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows for reliable performance in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

No. of Words: 32768 words

With a large number of words, the product offers ample storage capacity for data.

Memory Width: 8

The memory width of 8 bits allows for fast data processing and retrieval.

Maximum Access Time: 70 ns

The fast maximum access time of 70 nanoseconds ensures quick data access and efficient operation.

Technical Specifications

SRAM BQ4011LYMA-70N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDMA-P28

Length:

37.72 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

9.53 mm

Maximum Standby Current:

.001 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

18.415 mm

Trade Compliance

BQ4011LYMA-70N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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