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BQ4010LYEBZ-70N

Texas Instruments

BQ4010LYEBZ-70N by Texas Instruments

BQ4010LYEBZ-70N by Texas Instruments is an 8Kx8 SRAM module with a memory density of 65536 bits. It operates at a max temperature of 85°C and has an access time of 70ns. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,283 parts In-Stock

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5,283

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Digiode

USA . 2,030 parts In-Stock

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2,030

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Parana Technologies

USA . 2,232 parts In-Stock

1+ parts

$2.812

100+ parts

-

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$3.299

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2,232

$2.812

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$3.299

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ChromeModa Solutions

Germany . 260 parts In-Stock

1+ parts

$3.160

100+ parts

$2.591

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260

$3.160

$2.591

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IDEA Electronic Components Group

UK . 182 parts In-Stock

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$3.160

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$2.844

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182

$3.160

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$2.844

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One Stop Electronics

USA . 935 parts In-Stock

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$13.000

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935

$13.000

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AZTECH Wire

Italy . 639 parts In-Stock

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$14.868

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639

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Northwest PG Solutions

USA . 1,608 parts In-Stock

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DigiPath Technology Company

USA . 1,147 parts In-Stock

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$2.849

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$2.849

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Native Components

USA . 904 parts In-Stock

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904

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Corphita

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Overview

Unlock the power of reliable non-volatile memory with the BQ4010LYEBZ-70N by Texas Instruments. Designed with expertise and precision, this SRAM module offers industrial-grade performance and a wide operating temperature range to suit various applications. With 8Kx8 organization and 8K words code, this memory IC provides fast access times and low standby current for optimal efficiency. Trust in Texas Instruments to deliver quality products that meet your needs effortlessly. Elevate your projects with the BQ4010LYEBZ-70N and experience the difference firsthand.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices and circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation reduces power consumption and simplifies the design of systems using this SRAM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with a wide range of electronic components and systems.

Power Supplies (V): 3.3

Lower power supply of 3.3V helps in reducing power consumption and heat dissipation, making the product energy efficient.

No. of Terminals: 28

Having 28 terminals provides compatibility with different types of connectors and interfaces, allowing for versatile integration.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM module can be used in a wide range of industrial applications.

Organization: 8KX8

Organized as 8Kx8, this memory module provides efficient storage capacity and easy access to data in parallel.

Technology: CMOS

Using CMOS technology ensures low power consumption, high speed, and compatibility with a variety of digital systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and mount the SRAM securely on PCBs, ensuring reliable connections.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, this SRAM provides fast data retrieval, enhancing overall system performance.

Technical Specifications

SRAM BQ4010LYEBZ-70N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDMA-T28

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

MODULE,34LEAD,1.0

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Standby Current:

.001 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

BQ4010LYEBZ-70N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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