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BQ4010YMA-150N

Texas Instruments

BQ4010YMA-150N by Texas Instruments

BQ4010YMA-150N by Texas Instruments is an 8Kx8 SRAM with 150ns access time, operating at 5V. It features asynchronous mode, industrial temperature grade, and non-volatile memory IC type. Ideal for applications requiring fast parallel memory access in industrial environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 7,073 parts In-Stock

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Digiode

USA . 3,622 parts In-Stock

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Semtec, LLC

USA . 286 parts In-Stock

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ECAB

Sweden . 5 parts In-Stock

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Electronics Depot

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Native Components

USA . 97 parts In-Stock

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$1.905

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Northwest PG Solutions

USA . 1,657 parts In-Stock

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$2.095

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Parana Technologies

USA . 640 parts In-Stock

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$3.799

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$4.289

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$3.799

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DigiPath Technology Company

USA . 811 parts In-Stock

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$4.184

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811

$4.184

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IDEA Electronic Components Group

UK . 1,947 parts In-Stock

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$4.269

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$3.842

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ChromeModa Solutions

Germany . 1,250 parts In-Stock

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$4.269

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$3.501

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AZTECH Wire

Italy . 755 parts In-Stock

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$5.378

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One Stop Electronics

USA . 1,179 parts In-Stock

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Component Stockers USA

USA . 214 parts In-Stock

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Glotronic Ltd.

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Corphita

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Microchip USA

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Overview

Elevate your electronic projects with the BQ4010YMA-150N by Texas Instruments, a top-of-the-line SRAM module designed to deliver unmatched quality and reliability. With its industrial-grade technology and versatile applications, this rectangular-shaped memory IC offers customers a seamless experience in their designs. Benefit from fast access times, low standby current, and a wide operating temperature range. Trust in Texas Instruments' reputation for excellence and innovation, and unlock endless possibilities for your next project with the BQ4010YMA-150N.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization and easy integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage provides reliable power to the SRAM, ensuring stable and consistent operation.

Power Supplies (V): 5

Having a single 5V power supply simplifies the design and reduces complexity in powering the SRAM module.

No. of Terminals: 28

With 28 terminals, this SRAM module offers a good balance of connectivity options while maintaining manageable complexity for integration.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style ensures high precision and reliability in the manufacturing process, resulting in a dependable product.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows for reliable operation even in challenging environmental conditions.

Organization: 8KX8

The 8KX8 organization offers a good balance between memory capacity and access speed, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the SRAM module can function effectively in cold environments.

Terminal Position: DUAL

The dual terminal position provides redundancy and flexibility in connection options, enhancing reliability and ease of integration.

Maximum Seated Height: 9.53 mm

The compact maximum seated height of 9.53 mm allows for easy installation in space-constrained devices.

Width: 18.415 mm

The moderate width of 18.415 mm enables easy placement on PCBs and compatibility with standard electronic components.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V ensures the SRAM module can operate within a wide range of input power levels.

Length: 37.72 mm

The length of 37.72 mm provides a compact form factor for the SRAM module, facilitating integration into various electronic devices.

Temperature Grade: INDUSTRIAL

The industrial temperature grade rating ensures the SRAM module can withstand harsh operating conditions commonly found in industrial environments.

Technology: CMOS

The CMOS technology used in the SRAM module offers low power consumption, high speed operation, and compatibility with various electronic systems.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for fast and efficient communication between the SRAM module and the connected devices, enhancing performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and reliable connections to the PCB, ensuring stable operation in demanding applications.

Maximum Supply Current: 75 mA

The maximum supply current of 75 mA ensures efficient power usage and compatibility with various power supply configurations.

No. of Words: 8192 words

The 8192-word capacity provides ample storage for data and instructions, making the SRAM module suitable for use in memory-intensive applications.

Memory Width: 8

The 8-bit memory width allows for efficient data handling and compatibility with standard data formats, enhancing usability.

Terminal Pitch: 2.54 mm

The terminal pitch of 2.54 mm facilitates easy PCB layout and soldering, ensuring quick and reliable assembly of the SRAM module.

No. of Words Code: 8K

The 8K words code specifies the memory capacity of the SRAM module, helping users organize and manage data effectively.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a safety margin for voltage variations, ensuring the SRAM module remains stable and reliable in operation.

Memory Density: 65536 bit

The high memory density of 65536 bits enables the storage of a large volume of data in a compact form factor, making the SRAM module highly efficient.

Memory IC Type: NON-VOLATILE SRAM MODULE

The non-volatile nature of the SRAM module ensures data retention even during power loss, offering data integrity and reliable operation.

Maximum Standby Current: 0.004 Amp

The low maximum standby current of 0.004 Amp minimizes power consumption during idle periods, enhancing energy efficiency and prolonging battery life.

Maximum Access Time: 150 ns

The fast maximum access time of 150 ns ensures quick retrieval of data from the SRAM module, enabling high-speed processing and enhanced system performance.

Technical Specifications

SRAM BQ4010YMA-150N attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

JESD-30 Code:

R-XDMA-T28

Length:

37.72 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

UNSPECIFIED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

9.53 mm

Maximum Standby Current:

.004 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

75 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

18.415 mm

Trade Compliance

BQ4010YMA-150N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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