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BQ4010LYMA-70

Texas Instruments

BQ4010LYMA-70 by Texas Instruments

BQ4010LYMA-70 by Texas Instruments is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 3.3V and has a max access time of 70ns. This rectangular package with 28 terminals is ideal for commercial applications requiring reliable asynchronous memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,248 parts In-Stock

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7,248

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Digiode

USA . 2,009 parts In-Stock

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2,009

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 836 parts In-Stock

1+ parts

$2.022

100+ parts

-

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836

$2.022

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Northwest PG Solutions

USA . 2,355 parts In-Stock

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$2.225

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2,355

$2.225

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Parana Technologies

USA . 381 parts In-Stock

1+ parts

$2.309

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$2.809

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381

$2.309

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$2.809

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DigiPath Technology Company

USA . 666 parts In-Stock

1+ parts

$2.542

100+ parts

$2.339

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666

$2.542

$2.339

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ChromeModa Solutions

Germany . 3,273 parts In-Stock

1+ parts

$2.594

100+ parts

$2.127

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3,273

$2.594

$2.127

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IDEA Electronic Components Group

UK . 1,498 parts In-Stock

1+ parts

$2.594

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$2.335

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1,498

$2.594

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$2.335

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AZTECH Wire

Italy . 861 parts In-Stock

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$13.141

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861

$13.141

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One Stop Electronics

USA . 746 parts In-Stock

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$23.000

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Corphita

USA . 4,735 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the BQ4010LYMA-70 by Texas Instruments, a leading manufacturer in the industry. This SRAM module offers seamless performance in various applications, ensuring optimal functionality and efficiency. With its durable construction and advanced technology, this product guarantees superior results while providing exceptional value to customers. Trust Texas Instruments for top-notch solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage makes the product compatible with a variety of systems and ensures efficient power consumption.

No. of Terminals: 28

Having 28 terminals allows for easy connectivity and integration into different circuits and systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can perform reliably even under high heat conditions.

Memory IC Type: NON-VOLATILE SRAM MODULE

The non-volatile SRAM module ensures data retention even when power is lost, providing reliable storage and retrieval of information.

Technical Specifications

SRAM BQ4010LYMA-70 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T28

Length:

37.72 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Maximum Seated Height:

9.53 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

18.415 mm

Trade Compliance

BQ4010LYMA-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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