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IS61VPS204836B-250B3L-TR

Integrated Silicon Solution

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates at 2.5V, has a memory width of 36 bits, and offers a max access time of 2.8 ns. Ideal for applications requiring fast synchronous memory with high storage capacity in commercial temperature environments.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 3,753 parts In-Stock

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Nova Conductors

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Aztec Data Supply Inc.

USA . 329 parts In-Stock

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$5.051

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Corohmni

South Africa . 15 parts In-Stock

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AZTECH Wire

Italy . 885 parts In-Stock

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Continental Prestige Electronics

USA . 5,340 parts In-Stock

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Argo Parts USA

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Aranea Global

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Advanced Electronics

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Overview

Elevate your device's performance with the IS61VPS204836B-250B3L-TR from Integrated Silicon Solution. As a leader in SRAM technology, ISS delivers unparalleled quality and reliability. This CACHE SRAM memory module offers lightning-fast access times and a generous memory density of 75497472 bits, perfect for demanding applications where speed is essential. With a commercial-grade temperature range and a thin-profile package design, this versatile component is ideal for a wide range of industrial and consumer electronics. Upgrade your system today and experience the difference with ISS.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures reliable and precise data transfer within the device.

Nominal Supply Voltage / Vsup (V): 2.5

The 2.5V supply voltage is a common and stable voltage level for powering the device.

No. of Terminals: 165

Having a high number of terminals enables the product to handle complex data processing tasks.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the product can operate efficiently in various environmental conditions.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high-speed performance.

Memory IC Type: CACHE SRAM

The cache SRAM memory type allows for quick access to frequently used data, enhancing overall system performance.

Maximum Access Time: 2.8 ns

The fast maximum access time of 2.8 ns ensures quick retrieval of data, making the product suitable for high-performance applications.

Technical Specifications

SRAM IS61VPS204836B-250B3L-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

2.8 ns

Additional Features:

PIPELINED ARCHITECTURE

JESD-30 Code:

R-PBGA-B165

Length:

15 mm

Memory Density:

75497472 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

165

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2.625 V

Minimum Supply Voltage (Vsup):

2.375 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

13 mm

Trade Compliance

IS61VPS204836B-250B3L-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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