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IS61C6416AL-12KI

Integrated Silicon Solution

IS61C6416AL-12KI by Integrated Silicon Solution

IS61C6416AL-12KI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,331 parts In-Stock

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Prism Electronics

USA . 580 parts In-Stock

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580

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Nova Conductors

Japan . 71 parts In-Stock

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71

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Distributors (Availability)

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AZTECH Wire

Italy . 622 parts In-Stock

1+ parts

$15.463

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622

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Experience superior performance and reliability with the IS61C6416AL-12KI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality SRAM products that are perfect for a wide range of applications. This high-quality memory module offers unmatched value and benefits, making it the ideal choice for your next project. Trust ISS to provide you with innovative solutions that meet your needs and exceed your expectations. Unlock the potential of your devices with the IS61C6416AL-12KI today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and convenient installation on a circuit board, saving time during assembly.

Operating Mode: ASYNCHRONOUS

Provides flexibility in data transfer and processing, allowing for efficient communication between components.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable voltage level, ensuring compatibility with other components in the system.

No. of Words: 65536 words

Offers a large storage capacity, making it suitable for applications that require a significant amount of data to be processed.

Maximum Access Time: 12 ns

Provides fast data access and processing speeds, ideal for time-sensitive applications that require quick responses.

Technical Specifications

SRAM IS61C6416AL-12KI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J44

JESD-609 Code:

e0

Length:

28.575 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ44,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.75 mm

Maximum Standby Current:

.0001 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

55 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IS61C6416AL-12KI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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