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IS61LV6416-10BLI

Integrated Silicon Solution

IS61LV6416-10BLI by Integrated Silicon Solution

IS61LV6416-10BLI by Integrated Silicon Solution is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact GRID ARRAY package.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 646 parts In-Stock

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Prism Electronics

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Nova Conductors

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AZTECH Wire

Italy . 276 parts In-Stock

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Assy Fe

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Kepictronics

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Bastille Electronics

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Overview

Enhance the performance of your electronic devices with the IS61LV6416-10BLI by Integrated Silicon Solution. This high-quality SRAM offers reliable and fast memory storage, perfect for industrial applications that require quick access to data. With a durable plastic/epoxy package and a thin profile, this chip is designed for seamless integration into your designs. Trust in ISS's proven track record of producing top-notch memory solutions to ensure your products stand out in the market. Upgrade your electronics with the IS61LV6416-10BLI and experience improved efficiency and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the SRAM, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCBs, making it ideal for compact electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables fast and independent access to memory locations, enhancing overall performance of the SRAM.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with standard power sources and efficient power consumption.

Organization: 64KX16

With a storage capacity of 64K words organized in a 16-bit width, this SRAM offers ample memory for data storage and retrieval.

Maximum Operating Temperature: 85 °C

Capable of operating at temperatures up to 85°C, this SRAM is suitable for industrial applications where high temperature resistance is required.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption, fast switching speeds, and high noise immunity, making it an efficient and reliable choice for memory storage.

Technical Specifications

SRAM IS61LV6416-10BLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

3.63 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

6 mm

Trade Compliance

IS61LV6416-10BLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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