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AS7C316098A-10BINTR

Alliance Memory

AS7C316098A-10BINTR by Alliance Memory

Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.

Median Price

$19.139

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$19.139

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Vyrian

USA . 8,218 parts In-Stock

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VNN

France . 902 parts In-Stock

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AZTECH Wire

Italy . 373 parts In-Stock

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$9.177

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Continental Prestige Electronics

USA . 5,767 parts In-Stock

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$18.756

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Netroflash

USA . 2,000 parts In-Stock

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$19.139

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$18.756

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Argo Parts USA

USA . 1,343 parts In-Stock

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Overview

Unlock the power of reliable and high-performance memory with the AS7C316098A-10BINTR from Alliance Memory. This top-of-the-line SRAM offers unparalleled quality and precision, making it the perfect choice for industrial applications where speed and efficiency are crucial. With a wide operating temperature range and low profile design, this memory module is versatile and durable, ensuring seamless operation in any environment. Trust Alliance Memory to deliver cutting-edge technology that enhances your systems' performance and reliability. Experience the difference with the AS7C316098A-10BINTR today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable and affordable.

Surface Mount: YES

Allows for easy and efficient installation onto circuit boards.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, ensuring compatibility with other components.

Package Shape: RECTANGULAR

Rectangular shape helps in efficient packaging and placement within electronic devices.

Operating Mode: ASYNCHRONOUS

Allows for independent and simultaneous access to multiple memory locations, enhancing overall performance.

Organization: 1MX16

High memory organization provides ample storage capacity for data-intensive applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making the product energy-efficient and responsive.

Maximum Access Time: 10 ns

Fast access time ensures quick retrieval of data, enhancing overall system efficiency.

Technical Specifications

SRAM AS7C316098A-10BINTR attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

AS7C316098A-10BINTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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