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71V3559S75BQI8

Integrated Device Technology

71V3559S75BQI8 by Integrated Device Technology

71V3559S75BQI8 by Integrated Device Technology is a CACHE SRAM with 256KX18 organization, operating at 3.3V. It features synchronous operation, thin profile grid array package style, and 7.5 ns max access time. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.

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Vyrian

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AZTECH Wire

Italy . 658 parts In-Stock

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Semicontronic

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Ampacity Inc.

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Experience top-notch performance and reliability with the 71V3559S75BQI8 by Integrated Device Technology, a leading manufacturer in the industry. This CACHE SRAM offers a seamless synchronous operation with a memory density of 4718592 bits, perfect for industrial applications that demand high-speed data processing. With a thin profile grid array package design, this SRAM ensures easy installation and efficient use of space. Trust in Integrated Device Technology to deliver cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time during assembly.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers, improving overall system efficiency and performance.

Nominal Supply Voltage / Vsup (V): 3.3

Suitable voltage level for reliable and stable operation of the product.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications.

Technology: CMOS

Utilizes low power consumption and offers high speed performance, enhancing overall efficiency.

Memory IC Type: CACHE SRAM

Provides fast access times and high data transfer rates, ideal for applications requiring quick data retrieval.

Technical Specifications

SRAM 71V3559S75BQI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

7.5 ns

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e0

Length:

15 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX18

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

13 mm

Trade Compliance

71V3559S75BQI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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