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71V35761SA200BGGI

Integrated Device Technology

71V35761SA200BGGI by Integrated Device Technology

71V35761SA200BGGI by Integrated Device Technology is a 128KX36 CACHE SRAM with 3.3V supply voltage, operating synchronously at -40 to 85°C. Featuring a fast access time of 3.1 ns, it's ideal for industrial applications requiring high-speed parallel memory operations.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 8,370 parts In-Stock

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VNN

France . 4,132 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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AZTECH Wire

Italy . 296 parts In-Stock

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$9.132

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Ampacity Inc.

Singapore . 1,628 parts In-Stock

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Semicontronic

India . 1,288 parts In-Stock

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$20.475

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Continental Prestige Electronics

USA . 1,681 parts In-Stock

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Argo Parts USA

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Microchip USA

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Aranea Global

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Overview

Elevate your system performance with the 71V35761SA200BGGI by Integrated Device Technology. Known for their top-notch quality and reliability, IDT brings you this cutting-edge SRAM memory that is perfect for a wide range of applications. With a nominal supply voltage of 3.3V and a lightning-fast maximum access time of 3.1 ns, this memory module delivers exceptional speed and efficiency. Say goodbye to lagging systems and hello to seamless operation with the 71V35761SA200BGGI. Upgrade your technology today and experience the difference!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the SRAM, making it a reliable choice.

Surface Mount:

YES - Allows for easy and efficient installation on a circuit board, saving time and effort.

Package Shape:

RECTANGULAR - This shape is common and compatible with various systems, enhancing the SRAM's usability.

Operating Mode:

SYNCHRONOUS - Ensures synchronized data transfer, improving the efficiency and performance of the SRAM.

Nominal Supply Voltage / Vsup (V):

3.3 - This voltage level is standard and compatible with many devices, making integration easy.

No. of Terminals:

119 - Provides ample connections for proper functioning and reliability of the SRAM.

Package Style (Meter):

GRID ARRAY - This style offers a compact and organized layout, optimizing space on the circuit board.

Maximum Operating Temperature:

85 °C - Withstands high temperatures, ensuring stable performance in various environments.

Organization:

128KX36 - Organized in a way that maximizes data storage capacity, making it efficient for data handling.

Minimum Operating Temperature:

40 °C - Functions effectively in low temperatures, suitable for a wide range of operating conditions.

Terminal Finish:

TIN SILVER COPPER - This finish provides excellent conductivity and corrosion resistance, ensuring lasting performance.

Terminal Position:

BOTTOM - Allows for convenient placement and connection, facilitating the installation process.

Minimum Supply Voltage (Vsup):

3.135 V - Offers a reliable power supply level, essential for consistent operation.

Peak Reflow Temperature °C:

260 - Can withstand high reflow temperatures during assembly, ensuring proper soldering and connection.

Temperature Grade:

INDUSTRIAL - Suitable for industrial applications, designed to meet the demands of harsh environments.

Technology:

CMOS - Utilizes CMOS technology for low power consumption and high speed, enhancing overall performance.

Parallel or Serial:

PARALLEL - Operates in parallel mode, providing fast and efficient data transfer for optimal functionality.

Terminal Form:

BALL - Ball terminals offer secure connections and reliable conductivity, ensuring stable operation.

No. of Words:

131072 words - Provides a large memory capacity, suitable for storing extensive data sets.

Memory Width:

36 - Offers a wide memory width, capable of handling large amounts of data simultaneously.

No. of Words Code:

128K - Utilizes a 128K-word code, allowing for efficient data organization and access.

Moisture Sensitivity Level (MSL):

3 - Designed to withstand moderate levels of moisture, ensuring reliability in various conditions.

Maximum Supply Voltage (Vsup):

3.465 V - Safely operates within a maximum voltage range, preventing damage to the SRAM.

Memory Density:

4718592 bit - Provides high memory density, facilitating efficient data storage and retrieval.

Memory IC Type:

CACHE SRAM - Specifically designed as a cache SRAM, optimized for quick access times and high-speed data processing.

Maximum Access Time:

3.1 ns - Offers fast access times, ensuring quick retrieval of data for improved system performance.

Technical Specifications

SRAM 71V35761SA200BGGI attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

3.1 ns

Additional Features:

PIPELINED

JESD-30 Code:

R-PBGA-B119

JESD-609 Code:

e1

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

119

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Trade Compliance

71V35761SA200BGGI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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