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AS6C4008A-55ZIN

Alliance Memory

AS6C4008A-55ZIN by Alliance Memory

Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.

Median Price

$4.760

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

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$4.760

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$4.760

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Vyrian

USA . 4,189 parts In-Stock

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VNN

France . 481 parts In-Stock

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481

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 864 parts In-Stock

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$8.561

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864

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QUARKTWIN TECHNOLOGY LTD

USA . 22,031 parts In-Stock

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22,031

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Perfect Parts

USA . 175 parts In-Stock

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Overview

Experience unparalleled reliability and performance with the AS6C4008A-55ZIN by Alliance Memory. As a leading manufacturer in the SRAM category, Alliance Memory delivers top-notch quality and cutting-edge technology. This product offers customers immense value with its fast access time of 55ns and industrial temperature grade, making it ideal for a wide range of applications. Trust Alliance Memory to provide you with the memory solutions you need to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components, ensuring the product's longevity.

Surface Mount: YES

Surface mounting allows for easy installation on PCBs, making the product suitable for a wide range of applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient communication with other components in a system.

Nominal Supply Voltage / Vsup (V): 3

Operating at a relatively common supply voltage of 3V ensures compatibility with a variety of systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature makes this product suitable for industrial environments where heat may be a factor.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the product's reliability and efficiency.

Memory IC Type: STANDARD SRAM

Standard SRAM offers fast access times and is commonly used in a variety of applications, making this product versatile.

Maximum Access Time: 55 ns

The fast access time ensures quick data retrieval, making this product ideal for high-performance systems.

Technical Specifications

SRAM AS6C4008A-55ZIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

20.95 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

11.76 mm

Trade Compliance

AS6C4008A-55ZIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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