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AS6C4008-55STINTR

Alliance Memory

AS6C4008-55STINTR by Alliance Memory

Alliance Memory's AS6C4008-55STINTR is a 512Kx8 SRAM with 55ns access time, operating at 3/5V. Ideal for industrial applications, it features a small outline package and common I/O type in a rectangular shape. With 32 terminals and CMOS technology, this asynchronous memory offers high performance in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 10,500 parts In-Stock

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Connector Distribution Corp

USA . 3,951 parts In-Stock

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Right Parts Inc.

USA . 3,951 parts In-Stock

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VNN

France . 90 parts In-Stock

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90

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Nova Conductors

Japan . 63 parts In-Stock

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63

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Distributors (Availability)

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AZTECH Wire

Italy . 766 parts In-Stock

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$14.933

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766

$14.933

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Argo Parts USA

USA . 3,397 parts In-Stock

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Continental Prestige Electronics

USA . 2,593 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Alliance Memory's AS6C4008-55STINTR is a top-of-the-line SRAM memory chip that offers unparalleled reliability and performance. Ideal for industrial applications, this memory module boasts a compact design and low power consumption, making it a cost-effective solution for your project. Trust Alliance Memory's years of expertise in memory technology to deliver a product that exceeds expectations. Upgrade to the AS6C4008-55STINTR today and experience seamless performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, making it a reliable choice for long-term use.

Surface Mount: YES

Surface mount technology allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this SRAM can withstand harsh environmental conditions and ensure reliable performance in various applications.

Organization: 512KX8

The 512KX8 organization provides a good balance between storage capacity and data access speed, making it suitable for a wide range of memory-intensive tasks.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the SRAM.

Maximum Access Time: 55 ns

A fast access time ensures quick retrieval of data from the memory, making this SRAM suitable for high-performance computing tasks.

Technical Specifications

SRAM AS6C4008-55STINTR attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Standby Current:

.00003 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

60 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

AS6C4008-55STINTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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