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AS7C316096A-10TINTR

Alliance Memory

AS7C316096A-10TINTR by Alliance Memory

Alliance Memory's AS7C316096A-10TINTR is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.

Median Price

$18.986

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$18.986

100+ parts

-

1k+ parts

-

10k+ parts

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150

$18.986

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Vyrian

USA . 2,969 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,969

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VNN

France . 782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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782

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 366 parts In-Stock

1+ parts

$18.830

100+ parts

-

1k+ parts

-

10k+ parts

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366

$18.830

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Netroflash

USA . 50 parts In-Stock

1+ parts

$18.986

100+ parts

-

1k+ parts

$18.037

10k+ parts

$17.657

50

$18.986

-

$18.037

$17.657

Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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500

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Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$3.127

1k+ parts

$2.896

10k+ parts

$2.896

500

-

$3.127

$2.896

$2.896

Overview

Discover unparalleled performance and reliability with the AS7C316096A-10TINTR from Alliance Memory. As a leading manufacturer in the SRAM category, Alliance Memory delivers cutting-edge technology that meets the demands of industrial applications. With a focus on quality and innovation, this product offers customers exceptional value, benefits, and advantages. Trust Alliance Memory to provide the memory solutions you need for optimal performance and efficiency in your projects. Experience the difference with Alliance Memory today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Easy to install and reduces the overall footprint of the product, making it ideal for compact electronic devices.

Nominal Supply Voltage / Vsup (V): 3

Compatible with a common power supply voltage, making it versatile for various applications.

No. of Terminals: 48

Provides ample connectivity options for integrating the product into different circuit designs.

Operating Mode: ASYNCHRONOUS

Allows for independent and simultaneous access to data, improving overall performance and efficiency.

Output Characteristics: 3-STATE

Enables multiple devices to share the same bus without interference, enhancing system flexibility.

Memory Density: 16777216 bit

Offers high memory capacity, allowing for storing large amounts of data efficiently.

Maximum Access Time: 10 ns

Provides fast data access speed, ensuring quick response times in data retrieval.

Technical Specifications

SRAM AS7C316096A-10TINTR attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.04 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

12 mm

Trade Compliance

AS7C316096A-10TINTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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